CMP pads and method of creating voids in-situ therein

1. A method of creating pores in a CMP pad in-situ during a CMP polishing event, comprising:

impregnating a first material having a first resistance to frictional erosion with a second material having resistance to frictional erosion that is less than that of the first material to form a CMP pad having two materials with different frictional erosion resistances, wherein the second material is impregnated into the first material in an agglomerated form;

contacting a working surface of the CMP pad to a wafer to be polished; and

frictionally eroding the second material during the polishing process by operating the pad against the wafer.

2. The method of claim 1 , wherein both the first and second materials are polymeric materials.

3. The method of claim 1 , wherein the first material is a polymeric material and the second material is a non-polymeric material.

4. The method of claim 1 , wherein the first material is a polyurethane material and the second material is a carbon material.

5. The method of claim 4 , wherein the carbon material is graphite.

6. The method of claim 5 , wherein the carbon material has a high degree of graphitization.

7. The method of claim 1 , wherein both the first and second materials are non-polymeric materials.

8. The method of claim 1 , wherein the second material erodes into flakes of less than about 20 microns.

9. The method of claim 8 , wherein the second material provides lubrication for the CMP polishing event as it frictionally erodes.

10. The method of claim 1 , wherein the pores formed hold liquid polishing materials once created.

11. A method of creating effective pores in a CMP pad in-situ during a CMP polishing event, comprising:

impregnating a polyurethane material with graphite particles or agglomerates to form a CMP pad;

contacting a working surface of the CMP pad to a wafer to be polished;

introducing a chemical polishing agent on at least a portion of the working surface; and

frictionally eroding the graphite during the polishing process by operating the CMP pad against the wafer, such that the graphite erosion creates effective pores in the CMP pad.

12. A tool for polishing a wafer, comprising:

a first material suitable for forming a CMP pad and having a first resistance to frictional erosion, said first material forming a portion of the CMP pad;

a second material dispersed in the first material, said second material being in an agglomerated form and having a second resistance to frictional erosion that is less than that of the first material and configured to selectively erode based on differing resistance to frictional erosion, upon frictional contact with the wafer such that the erosion leaves effective pore voids in the solid substrate.

13. The tool of claim 12 , wherein both the first and second materials are polymeric materials.

14. The tool of claim 12 , wherein the first material is a polymeric material and the second material is a non-polymeric material.

15. The tool of claim 12 , wherein the first material is a polyurethane material and the second material is a carbon material.

16. The tool of claim 15 , wherein the carbon material is graphite.

17. The tool of claim 16 , wherein the carbon material has a high degree of graphitization.

18. The tool of claim 17 , wherein the graphite is included in the CMP pad in a volume of from about 0.1 vol % to about 20 vol %.

19. The tool of claim 12 , wherein both the first and second materials are non-polymeric materials.

20. The tool of claim 1 , wherein the second material is dispersed in the first material in a predetermined configuration.