Capacitor electrode, method for manufacturing the same, and semiconductor device
View Patent ↗A capacitor electrode is composed of an SrRuO 3 film including first and second surfaces opposed to each other. The capacitor electrode contains a 10 atom % or less trivalent element in a region ranging from a position a predetermined distance away from the first surface in the thickness direction thereof up to the second surface side.
1. A capacitor electrode comprising a first surface and a second surface opposed to each other,
wherein the capacitor electrode is composed of an SrRuO 3 film and contains a 10 atom % or less trivalent element in a region ranging from a position a predetermined distance away from the first surface in a thickness direction thereof up to the second surface side.
2. The capacitor electrode according to claim 1 , wherein the trivalent element is La.
3. The capacitor electrode according to claim 1 , wherein the predetermined distance is within the range of 0.5 to 2 nm.
4. A semiconductor device comprising a capacitor,
wherein the capacitor includes:
two capacitor electrodes according to claim 1 ; and
a dielectric film formed between the two capacitor electrodes so as to contact with the first surface of each of the two capacitor electrodes.
5. The semiconductor device according to claim 4 , wherein the relative permittivity of the dielectric film is 40 or greater.
6. The semiconductor device according to claim 4 , wherein the dielectric film contains at least one type of oxide selected from the group consisting of SrTiO 3 , TiO 2 , La 2 O 3 , Y 2 O 3 , HfO 2 , ZrO 2 and (Ba,Sr)TiO 3 .
7. The semiconductor device according to claim 4 , wherein data is stored depending on the state of charge retained in the capacitor.
8. A capacitor electrode, comprising:
an SrRuO 3 film containing a 10 atom % or less trivalent element; and
an SrRuO 3 film not containing a trivalent element.
9. The capacitor electrode according to claim 8 , wherein the trivalent element is La.
10. The capacitor electrode according to claim 8 , wherein the thickness of the SrRuO 3 film not containing the trivalent element is 0.5 to 2 nm.
11. A semiconductor device comprising a capacitor,
wherein the capacitor includes:
two capacitor electrodes according to claim 8 ; and
a dielectric film formed between the two capacitor electrodes so as to contact with the SrRuO 3 film not containing the trivalent element of each of the two capacitor electrodes.
12. The semiconductor device according to claim 11 , wherein the relative permittivity of the dielectric film is 40 or greater.
13. The semiconductor device according to claim 11 , wherein the dielectric film contains at least one type of oxide selected from the group consisting of SrTiO 3 , TiO 2 , La 2 O 3 , Y 2 O 3 , HfO 2 , ZrO 2 and (Ba,Sr)TiO 3 .
14. The semiconductor device according to claim 11 , wherein data is stored depending on the state of charge retained in the capacitor.