Sensor system with a lighting device and a detector device

1. A sensor system comprising a lighting device and a detector device, wherein said lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first, and said detector device is provided for detecting electromagnetic radiation of said first and said second wavelength

wherein the lighting device comprises a semiconductor laser diode

wherein said semiconductor laser diode has a first active region and a second active region,

wherein said first and second active regions are contained in a semiconductor layer sequence of said semiconductor laser diode and are stacked one on top of the other,

wherein said first active region emits laser radiation of said first wavelength and said second active region emits laser radiation of said second wavelength when said semiconductor laser diode is operating, and

wherein each of said first and said second active regions has a quantum well structure and said quantum well structures differ in their layer thicknesses and/or in the dimension of quantization for obtaining the different emission wavelengths.

2. The sensor system as in claim 1 , wherein the lighting device comprises a first semiconductor laser diode emitting in operation laser radiation of said first wavelength, and a second semiconductor laser diode emitting in operation laser radiation of said second wavelength.

3. The sensor system as in claim 1 , wherein said semiconductor layer sequence contains a tunnel diode between said first and said second active region.

4. The sensor system as in claim 3 , wherein each of said first and said second active regions has a quantum well structure and said quantum well structures differ in their material composition.

5. The sensor system as in claim 1 , wherein each of said first and said second active regions has a quantum well structure and said quantum well structures differ in their material composition.

6. The sensor system as in claim 1 , wherein said lighting device is provided for emitting laser radiation in the infrared spectral region.

7. The sensor system as in claim 6 , wherein said first and/or said second wavelength has a value between 800 nm (inclusive) and 1000 nm (inclusive).

8. The sensor system as in claim 1 , wherein a difference between said first and said second wavelength is greater than or equal to 20 nm.

9. The sensor system as in claim 1 , which is provided for measuring a distance and/or a speed.

10. A collision warning system comprising a sensor system according to claim 1 .

11. A night vision apparatus comprising a sensor system according to claim 1 .

12. The night vision apparatus as in claim 11 , wherein the detector device comprises a semiconductor image sensor or a low-light amplifier.

13. The sensor system as in claim 1 , wherein one of the first and second active regions comprises quantum dots or quantum wires and the other one of the first and second active regions comprises quantum troughs.

14. The sensor system as in claim 1 , wherein the semiconductor layer sequence is structured in the form of a web such that an index-guided ridge is created.

15. A sensor system comprising a lighting device and a detector device, wherein said lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first, and said detector device is provided for detecting electromagnetic radiation of said first and said second wavelength

wherein the lighting device comprises a semiconductor laser diode

wherein said semiconductor laser diode has a first active region and a second active region,

wherein said first and second active regions are contained in a semiconductor layer sequence of said semiconductor laser diode and are stacked one on top of the other,

wherein said first active region emits laser radiation of said first wavelength and said second active region emits laser radiation of said second wavelength when said semiconductor laser diode is operating,

wherein each of said first and said second active regions has a quantum well structure and said quantum well structures differ in their layer thicknesses and/or in the dimension of quantization, and

wherein the semiconductor laser diode has three or more active regions and a plurality of the active regions emit laser radiation of the first wavelength.

16. The sensor system as in claim 15 , wherein said lighting device is provided for emitting laser radiation in the infrared spectral region.

17. The sensor system as in claim 16 , wherein said first and/or said second wavelength has a value between 800 nm (inclusive) and 1000 nm (inclusive).

18. The sensor system as in claim 15 , wherein a difference between said first and said second wavelength is greater than or equal to 20 nm.

19. The sensor system as in claim 15 , which is provided for measuring a distance and/or a speed.

20. A collision warning system comprising a sensor system according to claim 15 .

21. A night vision apparatus comprising a sensor system according to claim 15 .

22. The night vision apparatus as in claim 21 , wherein the detector device comprises a semiconductor image sensor or a low-light amplifier.

23. A sensor system comprising a lighting device and a detector device, wherein said lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first, and said detector device is provided for detecting electromagnetic radiation of said first and said second wavelength

wherein the lighting device comprises a semiconductor laser diode

wherein said semiconductor laser diode has a first active region and a second active region,

wherein said first and second active regions are contained in a semiconductor layer sequence of said semiconductor laser diode and are stacked one on top of the other,

wherein said first active region emits laser radiation of said first wavelength and said second active region emits laser radiation of said second wavelength when said semiconductor laser diode is operating,

wherein each of said first and said second active regions has a quantum well structure and said quantum well structures differ in their layer thicknesses and/or in the dimension of quantization,

wherein the semiconductor layer sequence is structured in the form of a web such that an index-guided ridge is created, and

wherein the semiconductor layer sequence comprises a shutter layer having a strip-shaped opening that runs the length of the web and is surrounded laterally by an insulating region.

24. The sensor system as in claim 23 , wherein the strip-shaped opening has a width of 1-10 μm.