Display substrate having vertical thin film transistor having a channel including an oxide semiconductor pattern
View Patent ↗A display substrate according to the present invention comprises a gate line formed on a substrate, a data line, a thin film transistor connected to the gate line and the data line respectively and pixel electrode connected to the thin film transistor, wherein a channel of the thin film transistor is formed in a direction perpendicular to the substrate and, a layer where the channel is formed includes an oxide semiconductor pattern. ON current of thin film transistor of the display substrate can be increased without loss of aperture ratio.
1. A display substrate comprising a gate line formed on a substrate, a data line, a thin film transistor connected to the gate line and the data line respectively and pixel electrode connected to the thin film transistor, wherein
a channel of the thin film transistor is formed in a direction perpendicular to the substrate and,
a layer where the channel is formed includes an oxide semiconductor pattern,
wherein, a recess portion is formed on the data line and a gate electrode of the thin film transistor is formed on the recess portion.
2. A display substrate comprising:
a substrate;
a source electrode, an oxide semiconductor pattern and a drain electrode sequentially formed in a direction perpendicular to the substrate;
a gate electrode formed adjacent to the source electrode, the oxide semi conductor pattern and the drain electrode with an insulating layer being therebetween; and
a pixel electrode connected to the drain electrode,
wherein a recess portion is formed on a data signal line and the gate electrode is formed on the recess portion with the insulating layer being therebetween.
3. A display substrate comprising:
a substrate;
a data signal line extended in a first direction on the substrate;
a gate signal line extended in a second direction crossing the first direction and insulated from the data signal line;
a thin film transistor connected to the data signal line and the gate signal line; and
a pixel electrode connected to the thin film transistor,
wherein the thin film transistor comprises:
a source electrode connected to the data signal line;
an oxide semiconductor pattern formed on the source electrode;
a drain electrode formed on the oxide semiconductor pattern; and
a gate electrode connected to the gate signal line and formed adjacent to the source electrode, the oxide semiconductor pattern and the drain electrode with an insulating layer being therebetween,
wherein a recess portion is formed on the data signal line and the gate electrode is formed on the recess portion.
4. The display substrate as described in claim 3 , wherein the oxide semiconductor pattern comprises at least one of Ga, Zn, In and Sn, and O.
5. The display substrate as described in claim 4 , wherein the insulating layer is formed between the data signal line and the gate electrode.