ZINC OXIDE BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND ZINC OXIDE BASED THIN FILM

1 . A zinc (Zn) oxide based sputtering target having a composition of In x Ho y O 3 (ZnO) T , wherein x+y=2, x:y is about 1:0.001 to 1:1, and T is about 0.1 to 5.

2 . The Zn oxide based sputtering target of claim 1 , wherein the sputtering target is used in a direct current (DC) sputtering.

3 . The Zn oxide based sputtering target of claim 1 , wherein the sputtering target has an electrical resistivity of about 100 mΩ or less.

4 . A Zn oxide based thin film which is deposited using the sputtering target of claim 1 in a DC sputtering, wherein an electron mobility is about 10 cm 2 /V·s to 100 cm 2 /V·s.

5 . The Zn oxide based thin film of claim 4 , wherein the thin film is deposited under a mixed gas atmosphere of an argon gas and an oxygen gas in which a volume of the oxygen gas is about 0% to about 30%.

6 . The Zn oxide based thin film of claim 4 , wherein the thin film is amorphous.

7 . The Zn oxide based thin film of claim 4 , wherein a surface Root Mean Square (RMS) roughness of the thin film is about 100 Å or less.

8 . A method of manufacturing a Zn oxide based sputtering target, the method comprising:

adding a holmium (Ho) oxide powder in a slurry in which an indium (In) oxide powder and a Zn oxide powder are added to prepare a slurry mixture;

adding a dispersant in the slurry mixture and wet-milling the slurry mixture;

drying the slurry mixture to form a granular powder;

pressing the granular powder to obtain a pressed body; and

sintering the pressed body.

9 . The method of claim 8 , wherein the adding of the Ho oxide powder in the slurry includes:

mixing and wet-milling the Ho oxide powder, a first dispersant, and water to prepare a Ho oxide slurry;

mixing and wet-milling the In oxide powder, a second dispersant, and water to prepare an In oxide slurry;

mixing and wet-milling a Zn oxide powder, a third dispersant, and water to prepare a Zn oxide slurry; and

mixing the Ho oxide slurry, the In slurry, and the Zn oxide slurry.

10 . The method of claim 9 , wherein at least one of the first dispersant, the second dispersant, and the third dispersant is a polycarbonic acid-ammonium salt or a polyacrylic acid-ammonium salt.

11 . The method of claim 9 , wherein about 0.8 to 2.0 wt % of the first dispersant is contained in the Ho oxide slurry, about 0.5 to 1.5 wt % of the second dispersant is contained in the In oxide slurry, and about 0.1 to 0.5 wt % of the third dispersant is contained in the Zn oxide slurry.

12 . The method of claim 8 , wherein the granular powder exhibits an apparent density of about 1.3 or more according to the American Society for Testing and Materials (ASTM) of an international standards organization.

13 . The method of claim 8 , wherein the sintering is performed at a temperature of about 1,300° C. to 1,600° C. and under an oxygen atmosphere or an air atmosphere.