Method of manufacturing an inverted bottom-emitting OLED device

1. A method of making an inverted bottom-emitting OLED device, comprising:

a. providing a substrate;

b. providing one or more first electrodes driven by transistors of an n-type on the substrate;

c. providing an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 10 5 ohm-cm and a bandgap greater than 2.5 eV;

d. providing an organic light-emitting layer over the electron-transporting layer;

e. providing a hole-transporting layer over the organic emitting layer; and

f. providing a second electrode over the hole-transporting layer,

wherein said steps a to f take place in a sequential order.

2. The method of claim 1 wherein the transistors also comprise the n-type inorganic semiconductive material.

3. The method of claim 1 wherein the one or more first electrodes are cathodes and the second electrode is an anode.

4. The method of claim 3 wherein the anode is common to the entire device.

5. The method of claim 1 wherein the n-type inorganic semiconductive material includes zinc oxide, zinc sulfide, or zinc selenide, or combinations thereof.

6. The method of claim 5 wherein the electron-transporting layer has a thickness in the range of 10 nm to 500 nm.

7. The method of claim 1 wherein the n-type inorganic semiconductive material is deposited by means of atomic layer deposition.

8. The method of claim 7 wherein the deposition is effected at a temperature greater than 150° C.

9. The method of claim 1 wherein the n-type inorganic semiconductive material deposition is completed in a first manufacturing process and subsequent steps are performed in a second later manufacturing process.