Photomask, apparatus for manufacturing semiconductor device having the photomask, and method of manufacturing semiconductor device using the photomask
View Patent ↗A photomask is disclosed which can suppress deterioration of the depth of focus even in the case where main features are arranged randomly. Sub-features are replaced by a quadrangular sub-feature located inside an external quadrangle which includes as part of its outer periphery the outermost portions of the original sub-features. The sub-feature after the replacement is preferably in a square shape and the length of one side thereof is determined in accordance with the length of the associated external quadrangle. A central position of the sub-feature after the replacement is preferably coincident with the center of the external quadrangle or the center of gravity of the region which includes the original sub-features.
1. A photomask for the transfer of patterns to a substrate using an exposure unit, the photomask comprising:
a plurality of main features arranged at positions corresponding to the patterns to be transferred to the substrate;
a plurality of first sub-features associated with any of sides of the main features and arranged at positions spaced a predetermined distance from the associated sides; and
a second sub-feature which is selected to replace two or more of said first sub-features at a position associated with the first sub-features when said two or more first sub-features form a mutually overlapping portion when arranged virtually, the second sub-feature replacing as a substitute said two or more first sub-features,
wherein attributes of the second sub-feature are determined on the basis of attributes of the virtually arranged first sub-features associated with the second sub-feature, and
wherein at least one of a size and a shape of a replaced position of the second sub-feature is different from a size or a shape or replaced position of the virtually arranged first sub-features associated with the second sub-feature.
2. A photomask for the transfer of patterns to a substrate using an exposure unit, the photomask comprising:
a plurality of main features arranged at positions corresponding to the patterns to be transferred to the substrate;
a plurality of first sub-features associated with any of sides of the main features and arranged at positions spaced a predetermined distance from the associated sides; and
a second sub-feature which is selected to replace two or more of said first sub-features at a position associated with the two or more first sub-features which are substantially in parallel to each other when arranged virtually, the second sub-feature replacing as a substitute said two or more first sub-features,
wherein attributes of the second sub-feature are determined on the basis of attributes of the virtually arranged first sub-features associated with the second sub-feature, and
wherein at least one of a size and a shape of a replaced position of the second sub-feature is different from a size or a shape or replaced position of the virtually arranged first sub-features associated with the second sub-feature.
3. The photomask according to claim 1 ,
wherein the second sub-feature is arranged at the center of an outline of the virtually arranged first sub-features associated with the second sub-feature.
4. The photomask according to claim 1 ,
wherein the second sub-feature is arranged at the center of gravity of the region of the virtually arranged first sub-features associated with the second sub-feature.
5. The photomask according to claim 1 ,
wherein when the virtually arranged first sub-features associated with the second sub-feature intersect each other perpendicularly, the second sub-feature is substantially square.
6. The photomask according to claim 1 ,
wherein when the virtually arranged first sub-features associated with the second sub-feature are parallel to each other, the second sub-feature is arranged in parallel with the associated, virtually arranged first sub-features.
7. The photomask according to claim 6 ,
wherein the length in the longitudinal direction of the second sub-feature is substantially coincident with the length in the longitudinal direction of an outline of the virtually arranged first sub-features associated with the second sub-feature.
8. The photomask according to claim 1 ,
wherein the size of the second sub-feature is determined on the basis of the distance from the main features(s) adjacent thereto and the number of the main features(s) adjacent thereto.
9. The photomask according to claim 1 ,
wherein the position of the second sub-feature is determined on the basis of the distance from the main feature(s) adjacent thereto.
10. The photomask according to claim 1 ,
wherein the size of each of the first and second sub-features is determined on the basis of the distance from the first or the second sub-feature adjacent thereto.
11. The photomask according to claim 1 ,
wherein the width of each of the first sub-features is determined beforehand on the premise that the main features are arranged at a predetermined pitch.
12. The photomask according to claim 2 ,
wherein at least one of the size and the shape of the second sub-feature is different from the size and/or the shape of the virtually arranged first sub-features associated with the second sub-feature.
13. The photomask according to claim 2 ,
wherein the second sub-feature is arranged at the center of an outline of the virtually arranged first sub-features associated with the second sub-feature.
14. The photomask according to claim 2 ,
wherein the second sub-feature is arranged at the center of gravity of the region of the virtually arranged first sub-features associated with the second sub-feature.
15. The photomask according to claim 2 ,
wherein when the virtually arranged first sub-features associated with the second sub-feature are parallel to each other, the second sub-feature is arranged in parallel with the associated, virtually arranged first sub-features.
16. The photomask according to claim 15 ,
wherein the length in the longitudinal direction of the second sub-feature is substantially coincident with the length in the longitudinal direction of an outline of the virtually arranged first sub-features associated with the second sub-feature.
17. The photomask according to claim 2 ,
wherein the size of the second sub-feature is determined on the basis of the distance from the main features(s) adjacent thereto and the number of the main features(s) adjacent thereto.
18. The photomask according to claim 2 ,
wherein the position of the second sub-feature is determined on the basis of the distance from the main feature(s) adjacent thereto.
19. The photomask according to claim 2 ,
wherein the size of each of the first and second sub-features is determined on the basis of the distance from the first or the second sub-feature adjacent thereto.
20. The photomask according to claim 2 ,
wherein the width of each of the first sub-features is determined beforehand on the premise that the main features are arranged at a predetermined pitch.