Method for conditioning a substrate surface for forming an electronic device thereon and resultant device
View Patent ↗A method for forming an electronic device on a flexible substrate conditions a surface of the flexible substrate to increase its malleability and to provide a conditioned substrate surface. A master surface is impressed against the conditioned substrate surface. The master surface is then released from the conditioned substrate surface, thereby forming a circuit-side surface on the substrate. The electronic device is then formed on the circuit-side surface. The substrate may be supported on a carrier during the method.
1. A method for forming an electronic device on a flexible substrate comprising:
conditioning a surface of the flexible substrate to increase its malleability and provide a conditioned substrate surface;
impressing a master surface including a surface roughness less than 50 nanometers against the conditioned flexible substrate surface;
releasing the master surface from the conditioned substrate surface, thereby forming a circuit-side surface including a surface roughness less than 50 nanometers on the substrate; and
forming the electronic device on the circuit-side surface, wherein said forming comprises depositing and patterning materials to form a thin-film transistor device on the circuit-side surface.
2. The method of claim 1 wherein conditioning the surface of the flexible substrate comprises applying heat.
3. The method of claim 1 wherein conditioning the surface of the flexible substrate comprises applying a solvent.
4. The method of claim 1 wherein the master surface is glass or metal.
5. The method of claim 1 wherein the master surface is a roller surface.
6. The method of claim 1 wherein the master surface is featured, wherein a surface roughness of features on the circuit-side surface include the surface roughness less than 50 nanometers.
7. The method of claim 1 further comprising
applying an intermediate material between the master surface and the conditioned substrate surface before impressing the master surface against it; and
removing the intermediate material once the master surface has been released.
8. The method of claim 1 wherein conditioning the surface of the flexible substrate comprises providing the substrate as a plastic in an uncured state.
9. The method of claim 1 further comprising applying a planarization material to the circuit-side surface.
10. The method of claim 1 wherein impressing a master surface against the conditioned substrate surface comprises passing the substrate and master through a nip between two rollers.
11. The method of claim 1 wherein impressing a master surface against the conditioned substrate surface comprises using a pressure plate.
12. The method of claim 1 wherein the flexible substrate is plastic.
13. The method of claim 1 , further comprising supporting the substrate on a carrier during the conditioning, impressing, releasing and forming.
14. The method of claim 1 , further comprising supporting the substrate on a carrier during the impressing, releasing and forming.
15. The method of claim 1 , further comprising supporting the substrate on a carrier during the forming.
16. The method of claim 1 , further comprising depositing and patterning materials to form the electronic device on the circuit-side surface.
17. The method of claim 1 , wherein the featured surface is configured to determine a dimension of the semiconductor device on the circuit-side surface.
18. A method for forming an electronic device on a flexible substrate comprising:
conditioning a surface of the flexible substrate to increase its malleability and provide a conditioned substrate surface;
impressing a master surface against the conditioned flexible substrate surface;
releasing the master surface from the conditioned substrate surface, thereby forming a circuit-side surface including a surface roughness less than 50 nanometers on the substrate; and
forming the electronic device on the circuit-side surface, wherein said forming comprises depositing and patterning materials to form a thin-film transistor device on the circuit-side surface, where the master surface is featured, and where a surface roughness of features on the circuit-side surface include the surface roughness less than 50 nanometers.