III-nitride light emitting device incorporation boron
View Patent ↗Embodiments of the invention include a III-nitride semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. At least one layer in the light emitting region is B x (In y Ga 1-y ) 1-x N. In some embodiments, x is less than 14%. In some embodiments, the BN composition is selected such that the B x (In y Ga 1-y ) 1-x N layer has the same band gap energy as a comparable InGaN layer, with a bulk lattice constant that is the same or smaller than the comparable InGaN layer.
1. A structure comprising:
a III-nitride semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region, wherein:
at least one layer in the light emitting region is B x (In y Ga 1-y ) 1-x N, wherein the at least one B x (In y Ga 1-y ) 1-x N layer is a light emitting layer, 0.06≦x≦0.08, and 0.1≦y≦0.14.
2. The structure of claim 1 wherein:
the light emitting region comprises at least two quantum well light emitting layers separated by a barrier layer.
3. The structure of claim 1 wherein at least a portion of one of the n-type region and the p-type region in direct contact with the light emitting region has a graded composition.
4. The structure of claim 1 further comprising first and second electrical contacts electrically connected to the n-type and p-type regions.
5. The structure of claim 1 wherein the B x (In y Ga 1-y ) 1-x N layer is lattice-matched to GaN.
6. The structure of claim 1 wherein
the B x (In y Ga 1-y ) 1-x N layer is in compression.
7. A structure comprising:
a III-nitride semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region, wherein:
at least one layer in the light emitting region is B x (In y Ga 1 ) 1-x N, the at least one B x (In y Ga 1-y ) 1-x N layer, 0.08≦x≦0.11, and 0.14≦y≦0.18.
8. The structure of claim 7 wherein:
the light emitting region comprises at least two quantum well light emitting layers separated by a barrier layer.
9. The structure of claim 7 wherein at least a portion of one of the n-type region and the p-type region in direct contact with the light emitting region has a graded composition.
10. The structure of claim 7 further comprising first and second electrical contacts electrically connected to the n-type and p-type regions.
11. The structure of claim 7 wherein the B x (In y Ga 1-y ) 1-x N layer is lattice-matched to GaN.
12. A structure comprising:
a III-nitride semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region, wherein:
at least one layer in the light emitting region is B x (In y Ga 1-y ) 1-x N, the at least one B x(In y Ga 1-y ) 1-x N layer is a light emitting layer, 0.11≦x≦0.13, and 0.18≦y≦0.22.
13. The structure of claim 12 wherein:
the light emitting region comprises at least two quantum well light emitting layers separated by a barrier layer.
14. The structure of claim 13 wherein:
the light emitting region comprises at least two quantum well light emitting layers separated by a barrier layer; and
the barrier layer is B x (In y Ga 1-y ) 1-x N wherein x>0.
15. The structure of claim 13 wherein at least a portion of one of the n-type region and the p-type region in direct contact with the light emitting region has a graded composition.
16. The structure of claim 13 further comprising first and second electrical contacts electrically connected to the n-type and p-type regions.
17. The structure of claim 13 wherein the B x (In y Ga 1-y ) 1-x N layer is lattice-matched to GaN.
18. The structure of claim 13 wherein the B x (In y Ga 1-y ) 1-x N layer is in compression.