IP Library Granted Patent US 8,277,869
Granted Patent B2
US 8,277,869 · App. 12/397,873 · Granted Oct 2, 2012

Heating for buffer layer deposition

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Quick Facts
Patent No.
US 8,277,869
App. No.
12/397,873
Granted
Oct 2, 2012
Kind
B2
Abstract

Improved methods and apparatus for forming thin film buffer layers of chalcogenide on a substrate web through the chemical combination of a metal and chalcogen in solution form. The web and/or the solutions may be heated by one or a plurality of heating elements that may be disposed out of physical contact with the web, allowing enhanced control over the reaction speed through fine temperature control. One or more properties of the chalcogenide layer may be measured, and the temperature of the system may be adjusted in response.

Claims (28)

1. A method of depositing a thin film chalcogenide buffer layer onto a flexible substrate, comprising:

transporting a web of thin film substrate material through a deposition region;

heating the web substantially nonconductively to maintain an average web temperature;

dispensing onto a top surface of the web a first solution containing a metal chosen from the group consisting of copper, silver, gold, zinc, cadmium, mercury, lead, boron, aluminum, gallium, indium, and thallium;

dispensing onto the top surface of the web a second solution containing a chalcogen chosen from the group consisting of oxygen, sulfur, selenium, and tellurium;

measuring at least one property of a thin film formed through combination of the metal and the chalcogen, wherein the property is selected from the group consisting of thickness of the thin film and uniformity of the thin film; and

adjusting the average web temperature in response to the at least one measured property.

2. The method of claim 1 , wherein the measured property is thickness of the thin film.

3. The method of claim 1 , wherein the measured property is uniformity of the thin film.

4. The method of claim 1 , further comprising pre-heating the first solution to a temperature greater than the average web temperature prior to dispensing the first solution onto the web.

5. The method of claim 1 , wherein heating the web includes irradiating the web with infrared radiation emitted from a plurality of heater blocks.

6. The method of claim 5 , wherein at least one of the heater blocks includes a coating having emissivity substantially similar to the emissivity of the deposited chalcogenide buffer layer.

7. The method of claim 5 , wherein at least one of the heater blocks includes a coating configured to deter deposition of chalcogenide.

8. The method of claim 5 , wherein at least one of the heater blocks includes a removable lid.

9. The method of claim 1 , wherein heating the web includes passing the web over a plurality of heat sources, each heat source having an independently controllable temperature, and wherein adjusting the average web temperature includes adjusting the temperature of at least one of the heat sources.

10. A method of depositing a thin film chalcogenide buffer layer onto a flexible substrate, comprising:

transporting a web of thin film substrate material through a deposition region;

heating the web substantially nonconductively to maintain an average web temperature;

dispensing onto a top surface of the web a first solution containing a metal chosen from the group consisting of copper, silver, gold, zinc, cadmium, mercury, lead, boron, aluminum, gallium, indium, and thallium;

dispensing onto the top surface of the web a second solution containing a chalcogen chosen from the group consisting of oxygen, sulfur, selenium, and tellurium;

measuring a reaction rate of the metal and the chalcogen; and

adjusting the average web temperature in response to the measured reaction rate.

11. The method of claim 10 , further comprising pre-heating the first solution to a temperature greater than the average web temperature prior to dispensing the first solution onto the web.

12. The method of claim 10 , wherein heating the web includes irradiating the web with infrared radiation emitted from a plurality of heater blocks.

13. The method of claim 12 , wherein at least one of the heater blocks includes a coating having emissivity substantially similar to the emissivity of the deposited chalcogenide buffer layer.

14. The method of claim 12 , wherein at least one of the heater blocks includes a coating configured to deter deposition of chalcogenide.

15. The method of claim 12 , wherein at least one of the heater blocks includes a removable lid.

16. The method of claim 10 , wherein heating the web includes passing the web over a plurality of heat sources, each heat source having an independently controllable temperature, and wherein adjusting the average web temperature includes adjusting the temperature of at least one of the heat sources.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 12, 2022
From: MITHRIL REAL PROPERTY INC.
To: SUN HARMONICS CO. LTD.
Reel/Frame 061419/0551 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2022
From: MITHRIL REAL PROPERTY
To: MITHRIL REAL PROPERTY INC.
Reel/Frame 060114/0407 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2021
From: GLOBAL SOLAR ENERGY, INC.
To: MITHRIL REAL PROPERTY
Reel/Frame 056060/0146 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 8, 2016
From: HANERGY HI-TECH POWER (HK) LIMITED
To: GLOBAL SOLAR ENERGY, INC.
Reel/Frame 039972/0502 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2014
From: GLOBAL SOLAR ENERGY, INC.
To: HANERGY HI-TECH POWER (HK) LIMITED
Reel/Frame 032759/0526 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 16, 2009
From: BRITT, JEFFREY S.; ALBRIGHT, SCOT; SCHOOP, URS
To: GLOBAL SOLAR ENERGY, INC.
Reel/Frame 023665/0467 →