Method of manufacturing photoelectric device
View Patent ↗In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases.
1. A method of manufacturing a photoelectric device, comprising:
forming a first electrode on a substrate;
partially etching the first electrode using an etching solution including hydrofluoric (HF) acid during a predetermined process time to form a concavo-convex pattern on a surface of the first electrode;
forming a semiconductor layer on the first electrode, the semiconductor layer causing a photoelectric conversion using an incident light; and
forming a second electrode on the semiconductor layer.
2. The method of claim 1 , wherein the etching solution is provided to the first electrode by a spraying method.
3. The method of claim 1 , wherein the first electrode is formed by a sputtering method.
4. The method of claim 1 , wherein the etching solution further comprises deionized water, and a weight ratio of the hydrofluoric acid to the deionized water in the etching solution is in a range of about 1:10 to 1:1000.
5. The method of claim 4 , further comprising cleaning the first electrode using a cleaning solution after forming the concavo-convex pattern on the surface of the first electrode.
6. The method of claim 1 , wherein the first electrode has a haze of about 5% to about 60% and the haze is controlled by adjusting the predetermined process time.
7. The method of claim 1 , wherein a square average value of a surface roughness of the first electrode is in a range of about 10 nm to about 200 nm and the square average value is controlled by adjusting the predetermined process time.
8. The method of claim 1 , wherein the semiconductor layer comprises silicon, cadmium telluride (CdTe), copper indium gallium selenide (CIGS), copper indium selenide (CIS), or gallium arsenide.
9. The method of claim 1 , wherein the forming a second electrode on the semiconductor layer comprises forming a concavo-convex pattern on a surface of the second electrode.
10. The method of claim 9 , wherein the forming the concavo-convex pattern on the surface of the second electrode comprises partially etching the second electrode using an etching solution including hydrofluoric(HF) acid.
11. The method of claim 1 , wherein the first electrode comprises a zinc oxide.
12. The method of claim 11 , wherein the first electrode comprises zinc oxide (ZnO) of 80 weight-percent, and the zinc oxide is doped with aluminum or gallium.
13. A method of manufacturing a photoelectric device, comprising:
forming a first electrode on a substrate;
forming a semiconductor layer on the first electrode, the semiconductor layer causing a photoelectric conversion using an incident light;
forming a second electrode on the semiconductor layer; and
partially etching the second electrode using an etching solution including hydrofluoric (HF) acid during a predetermined process time to form a concavo-convex pattern on a surface of the second electrode.
14. The method of claim 13 , wherein the etching solution is provided to the second electrode by a spraying method.
15. The method of claim 13 , wherein the second electrode is formed by a sputtering method.
16. The method of claim 13 , wherein the etching solution further comprises deionized water, and a weight ratio of the hydrofluoric acid to the deionized water in the etching solution is in a range of 1:10 to 1:1000.
17. The method of claim 16 , further comprising:
cleaning the first electrode using a cleaning solution after forming the concavo-convex pattern on the surface of the second electrode.
18. The method of claim 13 , wherein the second electrode has a haze of about 5% to about 60% and the haze is controlled by adjusting the predetermined process time.
19. The method of claim 13 , wherein a square average value of a surface roughness of the second electrode is in a range of about 10 nm to about 200 nm and the square average value is controlled by adjusting the predetermined process time.
20. The method of claim 13 , wherein the semiconductor layer comprises silicon, cadmium telluride (CdTe), copper indium gallium selenide (CIGS), copper indium selenide (CIS), or gallium arsenide.
21. The method of claim 13 , wherein the second electrode comprises a zinc oxide.
22. The method of claim 21 , wherein the second electrode comprises zinc oxide (ZnO) of 80 weight-percent, and the zinc oxide is doped with aluminum or gallium.