Semiconductor device and method of manufacturing the same
View Patent ↗A method of manufacturing a semiconductor device is provided which comprises: forming a first gate insulating film and a second gate insulating film in an active region of a semiconductor substrate; introducing an impurity of a first conductivity type into a first site where a first body region is to be formed, the first site being disposed under the first gate insulating film in the active region; forming a gate electrode on each of the first gate insulating film and the second gate insulating film; and introducing an impurity of the first conductivity type into the first site and a second site where a second body region is to be formed, the second site being disposed under the second gate insulating film in the active region, to form the first body region and the second body region, respectively.
1. A method of manufacturing a semiconductor device comprising:
forming a first gate insulating film and a second gate insulating film in an active region of a semiconductor substrate;
introducing an impurity of a first conductivity type into a first site where a first body region is to be formed, the first site being disposed under the first gate insulating film in the active region;
forming a gate electrode on each of the first gate insulating film and the second gate insulating film; and
introducing an impurity of the first conductivity type into the first site and a second site where a second body region is to be formed, the second site being disposed under the second gate insulating film in the active region, to form the first body region and the second body region, respectively, and
wherein the impurity is introduced into the first site and a channel region of a transistor of a second conductivity type contemporaneously.
2. The method according to claim 1 , further comprising:
depositing a gate electrode material on the first gate insulating film and the second gate insulating film;
introducing the impurity to pass through the gate electrode material and the first gate insulating film when introducing the impurity to the first site; and
processing the gate electrode material into the gate electrodes.
3. The method according to claim 1 , wherein the first conductivity type is a p-type.
4. The method according to claim 1 , wherein the first conductivity type is an n-type.
5. A method of manufacturing a semiconductor device comprising:
forming a gate insulating film in an active region of a semiconductor substrate;
introducing an impurity of a first conductivity type into a site where a body region is to be formed in the active region;
forming a gate electrode on the gate insulating film; and
introducing an impurity of the first conductivity type into the site to form the body region, and
wherein the impurity is introduced into the site and a channel region of a transistor of a second conductivity type contemporaneously.
6. The method according to claim 5 , further comprising:
depositing a gate electrode material on the gate insulating film;
introducing the impurity to pass through the gate electrode material and the gate insulating film; and
processing the gate electrode material into the gate electrode.
7. The method according to claim 5 , wherein the first conductivity type is a p-type.
8. The method according to claim 5 , wherein the first conductivity type is an n-type.