IP Library › Granted Patent US 8,157,979
Granted Patent B2
US 8,157,979 · App. 12/401,429 · Granted Apr 17, 2012

Film having cobalt selenide nanowires and method of forming same

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Quick Facts
Patent No.
US 8,157,979
App. No.
12/401,429
Granted
Apr 17, 2012
Kind
B2
Abstract

A method for making a film having an array of cobalt selenide nanowires including: providing an aluminum substrate; anodizing the aluminum substrate to form anodized aluminum including an aluminum oxide layer having a plurality of pores therein on a surface of the aluminum substrate; preparing an electrodeposition composition including a source of cobalt ions and a source of selenite ions; contacting the anodized aluminum with the electrodeposition composition; and applying AC current to the anodized aluminum for a sufficient duration to electrodeposit cobalt selenide into the pores to form a film having an array of oriented cobalt selenide nanowires. According to a different aspect, a film has an aluminum substrate; an oxide layer having a plurality of pores therein on a surface of the aluminum substrate; and an array of cobalt selenide nanowires disposed in the pores.

Claims (36)

1. A method for making a film having an array of cobalt selenide nanowires comprising:

(a) providing an aluminum substrate;

(b) anodizing said aluminum substrate to form anodized aluminum including an aluminum oxide layer having a plurality of pores therein on a surface of said aluminum substrate;

(c) preparing an electrodeposition composition including a source of cobalt ions and a source of selenite ions;

(d) contacting said anodized aluminum with said electrodeposition composition; and

(e) applying AC current to said anodized aluminum for a sufficient duration to electrodeposit cobalt selenide into said pores to form a film having an array of oriented cobalt selenide nanowires.

2. A method according to claim 1 ,

wherein said anodizing is carried out in such a way that said pores have a diameter of less than about 50 nm.

3. A method according to claim 1 ,

wherein said anodizing is carried out in such a way that said pores have a depth of less than about 300 microns.

4. A method according to claim 1 ,

wherein said preparing of said electrodeposition composition is carried out in such a way that the pH of said electrodeposition composition achieves said nanowires having a desired ratio of selenium to cobalt.

5. A method according to claim 1 ,

wherein said preparing of said electrodeposition composition includes adjusting the quantities of a source of cobalt ions and a source of selenite ions to achieve said nanowires having a desired ratio of selenium to cobalt.

6. A method according to claim 1 ,

wherein said method is carried out in such a way that said cobalt selenide nanowires include an atomic ratio of selenium to cobalt in the range of about 0.5 to about 3.

7. A method according to claim 6 ,

wherein said method is carried out in such a way that said cobalt selenide nanowires include an atomic ratio of selenium to cobalt in the range of about 0.85 to about 2.05.

8. A method according to claim 1 ,

wherein said applying AC current is performed at a constant current density in a range of about 0.1 A/sq.dm to about 1.0 A/sq.dm.

9. A method according to claim 8 ,

wherein said applying AC current is performed at a constant current density in a range of about 0.3 Amps/sq.dm to about 0.5 A/sq.dm.

10. A method according to claim 8 ,

wherein said constant current is applied for a duration of about 30 minutes to about 60 minutes.

11. A method according to claim 1 ,

wherein said applying AC current is performed at a constant voltage in a range of from about 5 to about 30 volts.

12. A method according to claim 11 ,

wherein said applying AC current is performed at a constant voltage in a range of from above about 20 to about 30 volts.

13. A method according to claim 11 ,

wherein said constant voltage is applied for a duration of about 30 minutes to about 60 minutes.

14. A method according to claim 1 ,

including removing said oxide layer such that said cobalt selenide nanowires are disengaged from said anodized aluminum.

15. A method according to claim 14 ,

wherein said method is carried out in such a way that said cobalt selenide nanowires include more than one nanowire having a length of less than about 300 microns and a diameter of less than about 50 nm.

16. A method according to claim 1 ,

wherein said method is carried out in such a way that said nanowires are substantially perpendicular to the plane of the aluminum substrate.