Method of manufacturing by etching a semiconductor substrate horizontally without creating a vertical face
View Patent ↗An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.
1. A method of manufacturing a semiconductor element comprising the steps of:
growing epitaxially a semiconductor layer on top of a plane of Si substrate;
forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer;
removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and
immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate primarily horizontally and completely without creating a vertical face by a second etching method thereby removing the substrate from the semiconductor layer.
2. The method of claim 1 , wherein the semiconductor layer is epitaxially grown by a vapor deposition method.
3. The method of claim 1 , wherein the semiconductor layer includes a gallium-nitride semiconductor thin-film layer.
4. The method of claim 1 , wherein the semiconductor substrate is mainly a silicon substrate.
5. The method of claim 4 , wherein the silicon substrate is isotropically etched by being immersed in the second etchant.
6. The method of claim 5 , wherein the second etchant contains hydrofluoric-nitric acid.
7. The method of claim 4 , wherein the silicon substrate is anisotropically etched by being immersed in the second etchant.
8. The method of claim 7 , wherein the second etchant contains any one of an aqueous solution of potassium hydroxide and an aqueous solution of tetramethylammonium hydroxide.
9. The method of claim 7 , wherein the second etchant has a property of etching a semiconductor crystal in a direction that is parallel with a plain orientation of the semiconductor substrate.
10. The method of claim 1 , wherein the patterning process on the semiconductor layer is performed by any one of a photolithography technique and a printing technique.
11. The method of claim 1 , wherein the first etching method is a dry-etching method with a halogen-containing gas.
12. The method of claim 1 ,
wherein the first etching method of the semiconductor layer is a dry-etching method with a halogen-containing gas, and
the semiconductor substrate is over-etched by the first etching method.
13. The method of claim 1 , further comprising a step of forming a supporting material layer that is resistant to the second etchant on top of the semiconductor layer before the step of immersing the resultant in the second etchant.
14. The method of claim 1 , further comprising a step of forming a supporting material layer that is resistant to the second etchant on top of the grown semiconductor layer before the pattern forming step.
15. The method of claim 14 , wherein the supporting material layer has a shape similar to but not larger in size than the pattern portion of the semiconductor layer.
16. A method of manufacturing a semiconductor element comprising the steps of:
growing epitaxially a first semiconductor layer on top of a plane of Si substrate;
growing epitaxially a second semiconductor layer on top of the first semiconductor layer by any one of a metal organic chemical vapor deposition (MOCVD) method and a molecular beam epitaxy (MBE) method;
forming a patterned portion of the second and the first semiconductor layers by a patterning process on the second semiconductor layer;
removing a portion of the second and the first semiconductor layers other than the patterned portion of the second and the first semiconductor layers by a first etching method with a first etchant; and
removing the semiconductor substrate primarily horizontally and the patterned portion of the first semiconductor layer from the patterned portion of the second semiconductor layer by a second etching method with a second etchant.
17. The method of claim 16 , wherein the patterning process on the second semiconductor layer is performed by any one of a photolithography technique and a printing technique.
18. The method of claim 17 ,
wherein the first etching method is a dry-etching method with a halogen-containing gas, and
the semiconductor substrate is over-etched by the first etching method.
19. The method of claim 18 , wherein the semiconductor substrate is anisotropically etched by the second etching method.
20. The method of claim 19 , wherein the second etchant contains any one of an aqueous solution of an aqueous solution of potassium hydroxide and an aqueous solution of tetramethylammonium hydroxide.
21. The method of claim 1 , wherein the first etchant over-etches the semiconductor substrate.