Solid-state image sensor and method for manufacturing thereof as well as semiconductor device and method for manufacturing thereof
View Patent ↗A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr 1 for reading out a signal from a photoelectric conversion element PD formed in the substrate are formed on the front surface of the semiconductor substrate, where incident light is acquired from the rear surface of the semiconductor substrate.
1. A solid-state image sensor comprising:
a semiconductor substrate having: (a) a front surface; (b) a rear surface; and (b) a first hardness;
an edge detection portion formed in the semiconductor substrate in a thickness direction from the front surface, the edge detection portion having a length in a depth direction, the edge detection portion having a second hardness, the second hardness being larger than the first hardness, the semiconductor substrate having a portion removed by chemical mechanical polishing until a position where the edge detection portion is exposed;
a photo conversion element provided in the semiconductor substrate, the photo conversion element configured to absorb light to perform photoelectric conversion, the photo conversion element having a thickness corresponding to the length in the depth direction of the edge detection portion; and
means for acquiring incident light from the rear surface by reading out a signal from the photoelectric conversion element, the means being formed on the front surface.
2. The solid-state image sensor of claim 1 , wherein the edge detection portion is formed to serve also as an element separation area.
3. The solid-state image sensor of claim 1 , wherein the edge detection portion is formed with a pillar layer which is different from an element separation area.
4. The solid-state image sensor of claim 3 , wherein an interval of the edge detection portion made of the pillar layer is set to an interval which prevents an uneven thickness from occurring in the chemical mechanical polishing.
5. A semiconductor device comprising:
a semiconductor substrate having: (a) a front surface; and (b) a rear surface; and (c) a first hardness; and
an edge detection portion formed in the semiconductor substrate in a thickness direction from the front surface, the edge detection portion having a length in a depth direction, the edge detection portion having a second hardness, the second hardness being larger than the first hardness, the semiconductor substrate being made as a thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface;
a photo conversion element provided in the semiconductor substrate, the photo conversion element configured to absorb light to perform photoelectric conversion, the photo conversion element having a thickness corresponding to the length in the depth direction of the edge detection portion; and
a plurality of components of the semiconductor device formed on the front surface and the rear surface.
6. The semiconductor device of claim 5 , wherein the edge detection portion is formed to serve also as an element separation area.
7. The semiconductor device of claim 5 , wherein the edge detection portion is formed with a pillar layer which is different from an element separation area.
8. The semiconductor device of claim 7 , wherein an interval of an etching stopper layer made of the pillar layer is set to an interval which prevents an uneven thickness from occurring when performing the chemical mechanical polishing.