Method for fabricating semiconductor components using maskless back side alignment to conductive vias

1. A method for fabricating a semiconductor component comprising:

providing a semiconductor substrate having a circuit side, a back side and a plurality of conductive vias comprising vias extending from the circuit side to the back side, an electrically insulating layer lining the vias and a metal in the vias;

forming a plurality of circuit side conductors on the circuit side in electrical contact with the conductive vias;

forming an outer dielectric layer on the circuit side having openings aligned with the conductive vias;

removing portions of the semiconductor substrate from the back side to expose terminal portions and surfaces of the conductive vias extending from the back side with a height X;

depositing a polymer layer on the back side encapsulating the terminal portions and the surfaces of the terminal portions with the polymer layer having a thickness equal to or greater than the height X;

planarizing the polymer layer, the terminal portions and the surfaces of the terminal portions to form self aligned conductors comprising the metal embedded in the polymer layer, a planarized polymer surface and planarized contactors on the conductive vias, with the planarizing step controlled to endpoint at the surfaces of the conductive terminal portions; and

forming a plurality of terminal contacts on the planarized contactors.

2. The method of claim 1 wherein the forming the terminal contacts step comprises forming under bump metallization layers on the planarized contactors.

3. The method of claim 1 wherein the planarizing step comprises chemical mechanical planarization (CMP) or grinding.

4. The method of claim 1 prior to forming the circuit side conductors forming a dielectric layer on the circuit side and forming the circuit side conductors on the dielectric layer.

5. A method for fabricating a semiconductor component comprising:

providing a semiconductor substrate having a circuit side, a back side and a plurality of conductive vias comprising through vias in the semiconductor substrate from the circuit side to the back side, an electrically insulating layer lining the vias and a metal in the vias;

etching the semiconductor substrate from the back side to expose terminal portions and surfaces of the conductive vias extending from the back side with a height X;

depositing a polymer layer on the back side encapsulating the terminal portions and the surfaces of the terminal portions, with the polymer layer having a thickness equal to or greater than the height X;

planarizing the polymer layer to form a planarized polymer surface and the surfaces of the terminal portions of the conductive vias to form self aligned conductors comprising the metal embedded in the polymer layer and planarized contactors formed by the surfaces of the terminal portions;

controlling the planarizing step to end point at the surfaces of the terminal portions; and

forming a plurality of redistribution conductors on the planarized polymer surface in electrical contact with planarized contactors.

6. The method of claim 5 further comprising forming a plurality of metallization layers on the redistribution conductors and forming terminal contacts on the metallization layers.

7. The method of claim 5 further comprising forming a plurality of terminal contacts on the redistribution conductors.

8. The method of claim 5 further comprising thinning the semiconductor substrate from the back side prior to the etching step.

9. The method of claim 5 wherein the depositing step is performed using a spin on process.

10. The method of claim 5 wherein the providing step provides the semiconductor substrate on a semiconductor wafer attached to a wafer carrier, and the etching, depositing and planarizing steps are performed on the semiconductor wafer attached to the carrier.

11. The method of claim 5 wherein the etching step removes from about 5-10 μm of the semiconductor substrate and the depositing step forms the polymer layer with a thickness on the back side of from 10-25 μm.

12. The method of claim 5 wherein the height X of the terminal portions on the back side is about 5-10 μm and the depositing step forms the polymer layer with a thickness on the back side of from 10-25 μm.

13. A method for fabricating semiconductor components comprising:

providing a semiconductor wafer comprising a circuit side, a back side, and a plurality of semiconductor substrates having a plurality of integrated circuits;

forming a plurality of conductive vias through the semiconductor substrates from the circuit side to the back side in electrical communication with the integrated circuits, each conductive via comprising a via, an insulating layer in the via and a metal filling the via;

forming a circuit side dielectric layer on the circuit side and a plurality of circuit side conductors on the circuit side dielectric layer in electrical contact with the conductive vias;

forming an outer dielectric layer on the circuit side having openings aligned with the conductive vias;

removing portions of the back side to expose terminal portions and surfaces of the conductive vias having a height X on the back side;

depositing a polymer layer on the back side encapsulating the terminal portions, with the polymer layer having a thickness equal to or greater than the height X;

planarizing the polymer layer to form a planarized polymer surface and the surfaces of the terminal portions to form self aligned conductors embedded in the polymer layer having planarized contactors formed by the surfaces of the terminal portions;

controlling the planarizing step to end point at the surfaces of the terminal portions;

forming a plurality of redistribution conductors on the planarized polymer surface in electrical contact with the planarized contactors; and

dicing the semiconductor wafer to separate the semiconductor substrates.

14. The method of claim 13 wherein the removing step comprises etching.

15. The method of claim 13 further comprising thinning the semiconductor wafer from the back side prior to the removing steps.

16. The method of claim 13 wherein the depositing the polymer layer step comprises spin coating.

17. The method of claim 13 further comprising forming a plurality of back side elements on the polymer layer in electrical communication with the redistribution conductors.

18. The method of claim 13 further comprising forming under bump metallization layers on the redistribution conductors and terminal contacts on the under bump metallization layers.

19. The method of claim 13 further comprising forming a plurality of terminal contacts on the redistribution conductors.