Data storage device employing high quality metrics when decoding logical block address appended to a data sector
View Patent ↗A data storage device is disclosed that receives a read command from a host, wherein the read command comprises a read logical block address (LBA_R). A target data sector is read in response to the LBA_R to generate a read signal. The read signal is processed to detect user data and redundancy data using a soft-output detector that outputs quality metrics for the user data and redundancy data. A high quality metric is assigned to the LBA_R, and errors are corrected in the user data using an error correction code (ECC) decoder in response to the quality metrics output by the soft-output detector and the quality metrics assigned to the LBA_R.
1. A data storage device comprising control circuitry operable to:
receive a read command from a host, the read command comprising a read logical block address (LBA_R);
read a target data sector in response to the LBA_R to generate a read signal;
process the read signal to detect user data and redundancy data using a soft-output detector that outputs quality metrics QM for the user data and redundancy data;
assign a high quality metric LBA_QM to the LBA_R; and
first correct errors in the user data using an error correction code (ECC) decoder in response to the quality metrics QM output by the soft-output detector and the quality metric LBA_QM assigned to the LBA_R.
2. The data storage device as recited in claim 1 , further comprising:
a disk comprising a plurality of data tracks, wherein each data track comprises a plurality of data sectors; and
a head actuated over the disk.
3. The data storage device as recited in claim 1 , wherein the soft-output detector comprises a Viterbi detector.
4. The data storage device as recited in claim 1 , wherein the soft-output detector comprises a soft-input-output detector.
5. The data storage device as recited in claim 1 , wherein the ECC decoder comprises an iterative ECC decoder.
6. The data storage device as recited in claim 5 , wherein the iterative ECC decoder comprises a Low-Density Parity-Check (LDPC) decoder.
7. The data storage device as recited in claim 1 , wherein the control circuitry is further operable to:
receive a write command from the host, the write command comprising user data and a write logical block address (LBA_W);
generate redundancy data over the user data and the LBA_W; and
write the user data and the redundancy data to the target data sector.
8. The data storage device as recited in claim 7 , wherein the LBA_W is not written to the target data sector.
9. The data storage device as recited in claim 1 , wherein when the ECC decoder is unable to first correct the errors in the user data, the control circuitry is further operable to:
assign a low quality metric LBA_QM to the LBA_R; and
second correct errors in the user data and the LBA_R using the ECC decoder in response to the quality metrics QM output by the soft-output detector and the quality metric LBA_QM assigned to the LBA_R.
10. The data storage device as recited in claim 9 , wherein the control circuitry is further operable to send an error message to the host when the LBA_R is corrected.
11. The data storage device as recited in claim 10 , wherein the control circuitry is further operable to detect that the LBA_R was corrected by comparing the LBA_R received from the host to the LBA_R after the second correcting.
12. The data storage device as recited in claim 1 , further comprising a non-volatile semiconductor memory comprising a plurality of data blocks, wherein each data block comprises a plurality of data sectors.
13. A method of operating data storage device comprising:
receiving a read command from a host, the read command comprising a read logical block address (LBA_R);
reading a target data sector in response to the LBA_R to generate a read signal;
processing the read signal to detect user data and redundancy data using a soft-output detector that outputs quality metrics QM for the user data and redundancy data;
assigning a high quality metric LBA_QM to the LBA_R; and
first correcting errors in the user data using an error correction code (ECC) decoder in response to the quality metrics QM output by the soft-output detector and the quality metric LBA_QM assigned to the LBA_R.
14. The method as recited in claim 13 , wherein the data storage device comprises:
a disk comprising a plurality of data tracks, wherein each data track comprises a plurality of data sectors; and
a head actuated over the disk.
15. The method as recited in claim 13 , wherein the soft-output detector comprises a Viterbi detector.
16. The method as recited in claim 13 , wherein the soft-output detector comprises a soft-input-output detector.
17. The method as recited in claim 13 , wherein the ECC decoder comprises an iterative ECC decoder.
18. The method as recited in claim 17 , wherein the iterative ECC decoder comprises a Low-Density Parity-Check (LDPC) decoder.
19. The method as recited in claim 13 , further comprising:
receiving a write command from the host, the write command comprising user data and a write logical block address (LBA_W);
generating redundancy data over the user data and the LBA_W; and
writing the user data and the redundancy data to the target data sector.
20. The method as recited in claim 19 , wherein the LBA_W is not written to the target data sector.
21. The method as recited in claim 13 , wherein when the ECC decoder is unable to first correct the errors in the user data, further comprising:
assigning a low quality metric LBA_QM to the LBA_R; and
second correcting errors in the user data and the LBA_R using the ECC decoder in response to the quality metrics QM output by the soft-output detector and the quality metric LBA_QM assigned to the LBA_R.
22. The method as recited in claim 21 , further comprising sending an error message to the host when the LBA_R is corrected.
23. The method as recited in claim 22 , further comprising detecting that the LBA_R was corrected by comparing the LBA_R received from the host to the LBA_R after the second correcting.
24. The method as recited in claim 13 , wherein the data storage device comprises a non-volatile semiconductor memory comprising a plurality of data blocks, wherein each data block comprises a plurality of data sectors.