Conductive chip-scale package
View Patent ↗A method for manufacturing a semiconductor package that includes forming a frame inside a conductive can, the frame being unwettable by liquid solder.
1. A power semiconductor package, comprising:
a conductive can having an interior surface for receiving a power semiconductor die;
said power semiconductor die having a first power electrode electrically and mechanically attached to said interior surface by a conductive adhesive; and
a high thermal and high infra-red absorption dielectric disposed on an exterior surface of said conductive can;
wherein said dielectric enables high thermal conduction to said conductive adhesive during attachment.
2. The package of claim 1 , wherein said dielectric is comprised of a polymer.
3. The package of claim 1 , wherein said semiconductor die is one of a power MOSFET, an IGBT, and a diode.
4. The package of claim 1 , wherein said dielectric is a pigmented polymer.
5. The package of claim 1 , wherein said dielectric is drop-on-demand deposited on said exterior surface of said conductive can.
6. The package of claim 1 , further comprising a frame inside said conductive can to define a receiving area on said interior surface for receiving said power semiconductor die, said frame being unwettable by solder in liquid phase.
7. The package of claim 6 , wherein said frame is comprised of solder resist.
8. The package of claim 6 , wherein said frame is comprised of a passivation material.
9. A power semiconductor package, comprising:
a conductive can having a frame to define an interior surface for receiving a power semiconductor die, wherein said conductive can includes a web portion and a wall surrounding said web portion, and wherein said frame is formed on said web portion between said wall and said interior surface, whereby said frame surrounds said interior surface;
a power semiconductor die having a first power electrode electrically and mechanically attached to said interior surface by a conductive adhesive; and
a high thermal absorption dielectric disposed on the exterior surface of said conductive can.
10. The package of claim 9 , wherein said semiconductor die is one of a power MOSFET, an IGBT, and a diode.
11. The package of claim 9 , wherein said dielectric is comprised of a polymer.
12. The package of claim 9 , wherein said dielectric is a pigmented polymer.
13. The package of claim 9 , wherein said dielectric is drop-on-demand deposited on said exterior surface of said conductive can.
14. The package of claim 9 , wherein said frame is unwettable by solder in liquid phase.
15. The package of claim 9 , wherein said frame is stencil printed.