Semiconductor device, DC/DC converter and power supply
A semiconductor device in which the self-turn-on phenomenon is prevented that can significantly improve power conversion efficiency. The semiconductor device is a system-in-package for power supply applications in which a high-side switch, a low-side switch, and two drivers are included in a single package. The device includes an auxiliary switch disposed between the gate and source of said low-side switch, and a low-side MOSFET 3 for the low-side switch and an auxiliary MOSFET 4 for the auxiliary switch are disposed on the same chip. In this way, the self-turn-on phenomenon can be prevented, allowing the mounting of a low-side MOSFET 3 with a low threshold voltage and thereby significantly improving power conversion efficiency. The gate of the auxiliary MOSFET 4 is driven by the driver for the high-side MOSFET 2 , thereby eliminating the need for a new drive circuit and realizing the same pin configuration as existing products, which facilitates easy replacement.
1. A semiconductor device comprising:
a high-side switch;
a low-side switch;
drivers for driving said high-side switch and said low-side switch individually; and
an auxiliary switch that prevents self turn-on of said low-side switch and that is disposed between the gate and source of said low-side switch, wherein said high-side switch, said low-side switch, said drivers, and said auxiliary switch are included in a single package, said low-side switch and said auxiliary switch are disposed on the same chip, said low-side switch is comprised of a vertical MOSFET, said auxiliary switch is comprised of a lateral MOSFET, and a gate-source breakdown voltage of said MOSFET of said auxiliary switch is higher than a gate-source breakdown voltage of said MOSFET of said low-side switch.
2. The semiconductor device of claim 1 , wherein said lateral MOSFET further comprises:
a first auxiliary MOSFET, and
a second auxiliary MOSFET.
3. The semiconductor device of claim 2 , further comprising:
a PWM controller for feeding a PWM signal to said driver for driving said high-side switch and to said driver for driving said low-side switch; and
an inductor and a capacitor for smoothing voltages outputted from said high-side switch and said low-side switch.
4. The semiconductor device of claim 1 , wherein said auxiliary switch is driven by the output of said driver for driving said high-side switch.
5. The semiconductor device of claim 1 , wherein the gate-source breakdown voltage of said MOSFET for said low-side switch is 1 V or smaller.
6. A DC/DC converter for a semiconductor device comprising:
a high-side switch;
a low-side switch;
a first driver for driving said high-side switch and a second driver for driving said low-side switch; and
an auxiliary switch that prevents self turn-on of said low-side switch and that is disposed between the gate and source of said low-side switch, wherein said high-side switch, said low-side switch, said first driver, said second driver, and said auxiliary switch are included in a single package, said low-side switch and said auxiliary switch are disposed on the same chip, said low-side switch is comprised of a vertical MOSFET, and said auxiliary switch is comprised of a lateral MOSFET, and a gate-source breakdown voltage of said MOSFET of said auxiliary switch is higher than a gate-source breakdown voltage of said MOSFET of said low-side switch.
7. The DC/DC converter of claim 6 , wherein said lateral MOSFET further comprises:
a first auxiliary MOSFET, and
a second auxiliary MOSFET.
8. The DC/DC converter of claim 6 , wherein said auxiliary switch is driven by the output of said driver for driving said high-side switch.
9. The DC/DC converter of claim 6 , wherein the gate-source breakdown voltage of said MOSFET for said low-side switch is 1 V or smaller.
10. The DC/DC converter of claim 6 , further comprising:
a PWM controller for feeding a PWM signal to said first driver for driving said high-side switch and to said second driver for driving said low-side switch; and
an inductor and a capacitor for smoothing voltages outputted from said high-side switch and said low-side switch.
11. A power supply system for a semiconductor device comprising:
a high-side switch;
a low-side switch;
drivers for driving said high-side switch and said low-side switch individually; and
an auxiliary switch that prevents self turn-on of said low-side switch and that is disposed between the gate and source of said low-side switch, wherein said high-side switch, said low-side switch, said drivers, and said auxiliary switch are included in a single package, said low-side switch and said auxiliary switch are disposed on the same chip, said low-side switch is comprised of a vertical MOSFET, said auxiliary switch is comprised of a lateral MOSFET, and a gate-source breakdown voltage of said MOSFET of said auxiliary switch is higher than a gate-source breakdown voltage of said MOSFET of said low-side switch.