Method of texturing solar cell and method of manufacturing solar cell

1. A method of texturing a solar cell, the method comprising:

texturing a surface of a substrate of the solar cell using a wet etchant,

wherein the substrate is a single crystal silicon substrate or a polycrystalline substrate,

wherein when the substrate is the single crystal silicon substrate, the wet etchant is an alkaline wet etchant including a surfactant, and when the substrate is the polycrystalline substrate, the wet etchant is an acidic wet etchant including a surfactant, and

the alkaline wet etchant is an etchant including an alkaline solution of 0.5 wt % to 23.5 wt % and the surfactant of 0.01 wt % to 0.1 wt % in pure water, and the acidic wet etchant is an etchant including a HF solution of about 5 wt % to 30 wt %, a HNO 3 solution of about 29 wt % to 75 wt %, and the surfactant of about 0.1 wt % to 3 wt % in pure water.

2. The method of claim 1 , wherein the alkaline solution is at least one selected from the group consisting of potassium hydroxide (KOH), sodium hydroxide (NaOH), ammonium hydroxide (NH 4 OH) and a mixed solution thereof.

3. The method of claim 1 , wherein the acidic wet etchant is an etchant including the surfactant in an acidic wet etch solution of HF and HNO 3 .

4. The method of claim 1 , wherein the surfactant is a fluorine-containing surfactant.

5. The method of claim 1 , wherein the texturing comprises generating a plurality of bubbles by reacting the wet etchant and the substrate, the plurality of bubbles adhering on a surface of the substrate, and

an etchant rate of first portions of the surface on which the plurality of bubbles are adhered is different from an etchant rate of second portions of the surface on which the plurality of bubbles are not adhered.

6. The method of claim 1 , wherein the surface is at least an upper portion of the substrate.

7. A method of manufacturing a solar cell, the method comprising:

forming an emitter layer on a substrate having a first conductive type, the emitter layer having a second conductive type opposite to the first conductive type;

texturing a surface of the emitter layer using a wet etchant;

forming a first electrode contacting the textured emitter; and

forming a second electrode contacting the substrate,

wherein the substrate is a single crystal silicon substrate or a polycrystalline substrate,

wherein when the substrate is the single crystal silicon substrate, the wet etchant is an alkaline wet etchant including a surfactant, and when the substrate is the polycrystalline substrate, the wet etchant is an acidic wet etchant including the surfactant, and

the alkaline wet etchant is an etchant including an alkaline solution of 0.5 wt % to 23.5 wt % and the surfactant of 0.01 wt % to 0.1 wt % in pure water, and the acidic wet etchant is an etchant including a HF solution of about 5 wt % to 30 wt %, a HNO 3 solution of about 29 wt % to 75 wt %, and the surfactant of about 0.1 wt % to 3 wt % in pure water.

8. The method of claim 7 , wherein the alkali solution is at least one selected from the group consisting of potassium hydroxide (KOH), sodium hydroxide (NaOH), ammonium hydroxide (NH 4 OH) and a mixed solution thereof.

9. The method of claim 7 , wherein the acidic wet etchant is an etchant including the surfactant in an acidic wet etch solution of HF and HNO 3 .

10. The method of claim 7 , wherein the surfactant is a fluorine-containing surfactant.

11. The method of claim 7 , wherein the texturing comprises generating a plurality of bubbles by reacting the wet etchant and the substrate, the plurality of bubbles adhering on a surface of the substrate, and

an etchant rate of a first surface of the substrate on which the plurality of bubbles are adhered is different from an etchant rate of a second surface of the substrate on which the plurality of bubbles are not adhered.