Method for laser singulation of chip scale packages on glass substrates

1. An improved method for singulation of compound electronic devices using a laser processing system, wherein a plurality of said compound electronic devices are manufactured in an assembly that includes a first substrate and a second substrate arranged in layers, said plurality of said compound electronic devices being arranged so as to provide streets between said compound electronic devices, and said laser processing system having a laser beam having parameters, said laser beam operative to laser machine said assemblies, the improvements comprising:

predetermining first laser parameters associated with performing a through cut on said first substrate;

predetermining second laser parameters associated with performing a scribe on said second substrate;

laser machining said through cut in said first substrate with said laser beam using first predetermined laser parameters, said through cut coincident with one of said streets between said compound semiconductor devices;

laser machining said scribe in said second substrate with said laser beam using second predetermined laser parameters, said scribe in said second substrate being aligned with said through cut in said first substrate; and

singulating said compound electronic devices by mechanically cleaving said second substrate along said scribe.

2. The method of claim 1 wherein a focal point of said laser beam is located at about said top surface of said first substrate to perform said laser machining of said through cut in said first substrate.

3. The method of claim 1 wherein a focal point of said laser beam is located between about 100 microns and 1000 microns above said top surface of said first substrate to perform said laser machining of said scribe in said second substrate.

4. The method of claim 1 wherein said through cut in said first substrate is laser machined by making between 2 and 10 passes of said laser beam on said first substrate.

5. The method of claim 1 wherein a travel speed of said laser beam is between about 100 and 500 mm/s while performing said laser machining of said first substrate.

6. The method of claim 1 wherein a travel speed of said laser beam is between about 200 and 600 mm/s while performing said laser machining of said second substrate.

7. The method of claim 1 , wherein said first laser parameters include a wavelength between about 266 nm and 1064 nm, a total power between about 4 W and 12 W, a spot size between about 10 microns and 50 microns, a pulse repetition rate between about 100 KHz and 1 MHz, and a pulse width between about 1 femtosecond and 1 nanosecond.

8. The method of claim 1 , wherein said second laser parameters include a wavelength between about 266 nm and 1064 nm, a total power between about 4 W and 12 W, a spot size between about 10 microns and 50 microns, a pulse repetition rate between about 100 KHz and 1 MHz, and a pulse width between about 1 fennosecond and 1 nanosecond.

9. The method of claim 1 , wherein laser machining said scribe in said second substrate comprises removing a portion of the second substrate.

10. The method of claim 1 , wherein the second substrate comprises glass.

11. An improved method for singulation of compound electronic devices using a laser processing system, wherein a plurality of said compound electronic devices are manufactured in an assembly that includes a first substrate and a second substrate arranged in layers, said plurality of said compound electronic devices being arranged so as to provide streets between said compound electronic devices, and said laser processing system having a laser beam having parameters, said laser beam operative to laser machine said assemblies, the improvements comprising:

predetermining first laser parameters associated with performing a near through cut extending partially through said first substrate;

predetermining second laser parameters associated with performing a scribe on said second substrate;

laser machining said near through cut in said first substrate with said laser beam having first predetermined laser parameters, said near through cut coincident with one of said streets between said compound semiconductor devices; and

laser machining said scribe in said second substrate with said laser beam having second predetermined laser parameters, said scribe in said second substrate being aligned with said near through cut in said first substrate;

singulating said compound electronic devices by mechanically cleaving said second substrate along said scribe.

12. The method of claim 11 wherein a focal point of said laser beam is located at about said top surface of said first substrate to perform said laser machining of said near through cut in said first substrate.

13. The method of claim 11 wherein a focal point of said laser beam is located between about 100 microns and 1000 microns above said top surface of said first substrate to perform said laser machining of said scribe in said second substrate.

14. The, method of claim 11 wherein said near through cut in said first substrate is laser machined by making between 2 and 10 passes of said laser beam on said first substrate.

15. The method of claim 11 wherein a travel speed of said laser beam is between about 100 and 500 mm/s while performing said laser machining of said first substrate.

16. The method of claim 11 wherein a travel speed of said laser beam is between about 200 and 600 mm/s while performing said laser machining of said second substrate.

17. The method of claim 11 , wherein laser machining said scribe in said second substrate with said laser beam having second predetermined laser parameters comprises directing said laser beam having second predetermined laser parameters through a portion of said first substrate.