Transparent conductive layer and method of manufacturing the same
View Patent ↗A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.
1. A transparent conductive layer comprising:
a substrate;
a first conductive layer disposed on the substrate; and
a second conductive layer disposed on the first conductive layer,
wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter between about 1 micrometer to about 3 micrometers.
2. The transparent conductive layer of claim 1 , wherein the first conductive layer is formed with In 2 O 3 , and the second conductive layer is formed with a ZnO-based material.
3. The transparent conductive layer of claim 2 , wherein the first conductive layer is formed with In 2 O 3 and equal to or less than 15 weight percent of at least one of SnO x , ZnO x , WO x , TiO x , and a combination comprising at least one of the foregoing oxides, based on the total weight of the first conductive layer.
4. The transparent conductive layer of claim 2 , wherein the second conductive layer is formed with ZnO and equal to or less than 10 weight percent of at least one of AlO x , GaO x , and a combination comprising at least one of the foregoing oxides, based on the total weight of the second conductive layer.
5. The transparent conductive layer of claim 1 , wherein the first conductive layer comprises a thickness between about 500 angstroms to about 3000 angstroms.
6. The transparent conductive layer of claim 1 , wherein the second conductive layer comprises a thickness between about 500 angstroms to about 10,000 angstroms.
7. A photoelectric device comprising:
a substrate;
a first conductive layer disposed on the substrate;
a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises an opening which exposes the first conductive layer;
a semiconductor layer disposed on the second conductive layer; and
a rear electrode disposed on the semiconductor layer,
wherein a top surface of the second conductive layer comprises a textured surface, and the opening comprises a diameter between about 1 micrometer to about 3 micrometers.
8. The photoelectric device of claim 7 , wherein the first conductive layer is formed with disposing In 2 O 3 , and the second conductive layer is formed with a ZnO-based material.
9. The photoelectric device of claim 8 , wherein the semiconductor layer comprises a lower layer and an upper layer,
wherein the lower layer comprises a P layer, an I layer, and an N layer which are sequentially disposed on the second conductive layer,
wherein the upper layer comprises a P layer, an I layer, and an N layer which are sequentially disposed on the lower layer,
wherein the I layer of the lower layer is formed with amorphous silicon, and the I layer of the upper layer is formed with micro-crystalline silicon.
10. The photoelectric device of claim 7 , wherein the semiconductor layer comprises a multi-layered structure comprising a plurality of sub-structures,
wherein each sub-structure comprises a P layer, an I layer, and an N layer which are sequentially disposed.
11. The photoelectric device of claim 7 , wherein the semiconductor layer comprises a P layer, an I layer, and an N layer, which are sequentially disposed on the second conductive layer.