Semiconductor device and manufacturing method thereof
View Patent ↗There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a semiconductor substrate containing silicon and having a main surface, first and second impurity diffusion layers formed in the main surface of the semiconductor substrate, a metal silicide formed over the second impurity diffusion layer, and a silicon nitride film and a first interlayer insulation film sequentially stacked over the metal silicide. In the semiconductor device, a contact hole penetrating through the silicon nitride film and the first interlayer insulation film, and reaching the surface of the metal silicide is formed. The thickness of a portion of the metal silicide situated immediately under the contact hole is smaller than the thickness of a portion of the metal silicide situated around the contact hole.
1. A semiconductor device, comprising:
a semiconductor substrate containing silicon, and having a main surface;
an impurity diffusion layer formed in the main surface of the semiconductor substrate;
a metal silicide layer formed in the impurity diffusion layer;
an insulation layer stacked over the metal silicide layer;
a gate insulation layer formed on the semiconductor substrate;
a gate electrode formed on the gate insulation layer; and
a contact plug formed in a contact hole,
wherein the contact hole penetrates through the insulation layer and reaches the surface of the metal silicide layer is formed,
wherein the metal silicide layer is formed below the gate insulation layer,
wherein a recess part as a bottom portion of the contact hole is formed in the surface of the metal silicide layer and is formed below the gate insulation layer, and
wherein the thickness of a portion of the metal silicide layer arranged immediately below the contact hole is smaller than the thickness of a portion of the metal silicide layer arranged around the contact hole.
2. The semiconductor device according to claim 1 ,
wherein the insulation layer includes a first insulation film which overlaps a part of the metal silicide layer, and a second insulation film stacked over the first insulation film, and
wherein the depth of the recess part formed in the metal silicide layer is 10% or more and 20% or less of the thickness of the first insulation film.
3. The semiconductor device according to claim 1 , further comprising:
a barrier metal layer formed in the contact hole; and
a conductive layer formed over the barrier metal layer,
wherein the barrier metal layer includes at least any one of Ta, W, Pt, Hf, and Ru.
4. The semiconductor device according to claim 3 ,
wherein the metal silicide layer is nickel silicide, including at least one material selected from Pt, Pd, V, Hf, Ta, W, Co, Er, and Yb.
5. The semiconductor device according to claim 1 ,
wherein the metal silicide layer and the impurity diffusion layer is formed in the semiconductor substrate around both sides of the gate electrode and gate insulation layer, and
wherein the recess part is formed above a bottom portion of the impurity diffusion layer.