IP Library Granted Patent US 9,798,370
Granted Patent B2
US 9,798,370 · App. 12/414,248 · Granted Oct 24, 2017

Dynamic memory voltage scaling for power management

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,798,370
App. No.
12/414,248
Granted
Oct 24, 2017
Kind
B2
Abstract

In the context of computer systems, the present invention broadly contemplates the ability to dynamically adjust the voltage and frequency of DRAM memory modules that are dual-voltage tolerant based on system performance. The invention allows a computer system to dynamically scale the memory voltage between a lower and a higher voltage, thereby allowing the system to save power when the system is idle or in low usage, but also allowing the system to realize the full memory performance when running more intensive applications.

Claims (66)

1. A method comprising:

monitoring current central processing unit usage;

setting at least one memory module to a lower operating voltage supported by the memory module, having a first frequency of operation, responsive to the current central processing unit usage dropping below a predetermined amount, wherein the setting at least one memory module to a lower operating voltage comprises stopping the memory clock frequency and changing the voltage of the at least one memory module to the lower operating voltage; and

setting the at least one memory module to a higher operating voltage supported by the memory module, having a second frequency of operation, other than the first frequency, responsive to the current central processing unit usage exceeding the predetermined amount, wherein the setting at least one memory module to a higher operating voltage comprises stopping the memory clock frequency and changing the voltage of the at least one memory module to the higher operating voltage.

2. The method according to claim 1 , further comprising:

querying the at least one memory module to determine if the memory module supports dual-voltage usage; and

setting the at least one memory module to the higher operating voltage during a system boot and operating system load;

wherein said at least one memory module comprises a dual voltage random access memory.

3. The method according to claim 1 , wherein the monitoring central processing unit usage comprises monitoring usage percentage of a central processing unit.

4. The method according to claim 1 , wherein:

the setting the at least one memory module to the higher operating voltage occurs if the central processing unit usage exceeds the predetermined amount for a first predetermined time; and

the setting the at least one memory module to the lower operating voltage occurs if the central processing unit drops below the predetermined amount for a second predetermined time.

5. The method according to claim 1 , wherein the setting the at least one memory module to a lower operating voltage further comprises:

putting the at least one memory module into a soft refresh and/or power down mode;

stopping a memory clock frequency;

issuing a command to change a voltage of the at least one memory module from the higher operating voltage to the lower operating voltage;

resuming the memory clock at a new clock frequency; and

exiting the soft refresh.

6. The method according to claim 1 , wherein the setting the at least one memory module to a higher operating voltage further comprises:

putting the at least one memory module into a soft refresh and/or power down mode;

stopping a memory clock frequency;

issuing a command to change a voltage of the at least one memory from the lower operating voltage to the higher voltage;

resuming the memory clock at original clock frequency; and

exiting the soft refresh.

7. The method according to claim 1 , wherein the predetermined usage amount is twenty percent.

8. The method according to claim 4 , wherein the second predetermined period of time is between one and two minutes.

9. The method according to claim 1 , wherein:

the higher operating voltage is 1.5 volts; and

the lower operating voltage is 1.35 volts.

10. An apparatus comprising:

at least one processor; and

a program storage device embodying a program of instructions that are executed by the at least one processor enable the apparatus to:

monitor central processing unit usage;

set at least one memory module to a lower operating voltage supported by the memory module, having a first frequency of operation, responsive to the current central processing unit usage dropping below a predetermined amount, wherein to set at least one memory module to a lower operating voltage comprises stopping the memory clock frequency and changing the voltage of the at least one memory module to the lower operating voltage; and

set the at least one memory module to a higher operating voltage supported by the memory module, having second frequency of operation, other than the first frequency, responsive to the current central processing unit usage exceeding the predetermined amount, wherein to set at least one memory module to a higher operating voltage comprises stopping the memory clock frequency and changing the voltage of the at least one memory module to the higher operating voltage.

11. The apparatus according to claim 10 , wherein the program of instructions further enable the apparatus to:

query the at least one memory module to determine if the memory module supports dual-voltage usage; and

set the at least one memory module to the higher operating voltage during a system boot and operating system load;

wherein said at least one memory module comprises a dual voltage random access memory.

12. The apparatus according to claim 10 , wherein to monitor central processing unit usage comprises monitoring usage percentage of a central processing unit.

13. The apparatus according to claim 10 , wherein the program of instructions enables the apparatus to set the at least one memory module to the higher operating voltage if the central processing unit usage exceeds the predetermined amount for a first predetermined time; and

set the at least one memory module to the lower operating voltage if the central processing unit usage drops below the predetermined amount for a second predetermined time.

14. The apparatus according to claim 10 , wherein to set the at least one memory module to a lower operating voltage further comprises:

putting the at least one memory module into a soft refresh and/or power down mode;

stopping a memory clock frequency;

issuing a command to change a voltage of the at least one memory module from the higher operating voltage to the lower operating voltage;

resuming the memory clock at a new clock frequency; and

exiting the soft refresh.

15. The apparatus according to claim 10 , wherein to set the at least one memory module to a higher operating voltage further comprises:

putting the at least one memory module into a soft refresh and/or power down mode;

stopping a memory clock frequency;

issuing a command to change a voltage of the at least one memory from the lower operating voltage to the higher operating voltage;

resuming the memory clock at original clock frequency; and

exiting the soft refresh.

16. The apparatus according to claim 10 , wherein the predetermined usage amount is twenty percent.

17. The apparatus according to claim 13 , wherein the second predetermined period of time is between one and two minutes.

18. The apparatus according to claim 10 , wherein:

the higher operating voltage is 1.5 volts; and

the lower operating voltage is 1.35 volts.

19. A program storage device readable by machine, embodying a program of instructions that when executed by at least one processor of the machine, the program of instructions comprising:

code that monitors central processing unit usage;

code that sets at least one memory module to a lower operating voltage supported by the memory module, having a first frequency of operation, responsive to the current central processing unit usage dropping below a predetermined usage amount, wherein the code that sets at least one memory module to a lower operating voltage comprises stopping the memory clock frequency and changing the voltage of the at least one memory module to the lower operating voltage; and

set the at least one memory module to a higher operating voltage supported by the memory module, having second frequency of operation, other than the first frequency, responsive to the current central processing unit usage exceeding the predetermined usage amount, wherein the code that sets at least one memory module to a higher operating voltage comprises stopping the memory clock frequency and changing the voltage of the at least one memory module to the higher operating voltage.

20. The program storage device according to claim 19 , wherein:

the higher operating voltage is 1.5 volts; and

the lower operating voltage is 1.35 volts.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 10, 2025
From: LENOVO PC INTERNATIONAL LIMITED
To: LENOVO SWITZERLAND INTERNATIONAL GMBH
Reel/Frame 069870/0670 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 8, 2019
From: LENOVO (SINGAPORE) PTE. LTD.
To: LENOVO PC INTERNATIONAL LIMITED
Reel/Frame 049689/0939 →