Array substrate and method of manufacturing the same
View Patent ↗An array substrate includes; a substrate, a gate line and a data line disposed on the substrate, a thin film transistor (“TFT”) electrically connected to the gate line and the data line, a light blocking member disposed on the substrate and a first color filter and a second color filter disposed on the substrate. The light blocking member covers a portion of the first color filter and the second color filter covers a portion of the light blocking member.
1. An array substrate comprising:
a substrate;
a gate line and a data line disposed on the substrate;
a thin film transistor electrically connected to the gate line and the data line;
a light blocking member disposed on the substrate; and
a first color filter and a second color filter disposed on the substrate,
wherein a portion of the light blocking member is disposed over a portion of the first color filter and a portion of the second color filter is disposed over a portion of the light blocking member, and
wherein a portion of the thin film transistor is disposed between the substrate and at least one of the first color filter and the second color filter.
2. The array substrate of claim 1 , further comprising:
a spacing member disposed on at least one of the first color filter and second color filter,
wherein the spacing member comprises substantially the same material as the light blocking member.
3. The array substrate of claim 2 , wherein the first color filter is formed by a photolithography process and the spacing member is disposed on at least a portion of the first color filter.
4. The array substrate of claim 2 , further comprising:
a protection layer disposed on the light blocking member, the first color filter and second color filter; and
a pixel electrode disposed on the protection layer,
wherein the pixel electrode is connected to the thin film transistor.
5. The array substrate of claim 4 , wherein the pixel electrode comprises:
a first pixel electrode connected to the thin film transistor through a first contact hole which penetrates the protection layer without penetrating a color filter; and
a second pixel electrode connected to a second thin film transistor through a second contact hole which penetrates the first color filter and the protection layer.
6. The array substrate of claim 5 , wherein the second color filter is formed by an ink-jet process and fills an inner area surrounded by the light blocking member, and
wherein the light blocking member comprises a first portion disposed along the gate line and the data line, and a second portion surrounding the first contact hole.
7. The array substrate of claim 6 , wherein the second portion has a square ring shape and the second color filter is not disposed in an inner area of the square ring shape.
8. The array substrate of claim 1 , further comprising:
a protection layer disposed on the light blocking member, the first color filter and second color filter; and
a pixel electrode disposed on the protection layer, wherein the pixel electrode is connected to the thin film transistor.
9. The array substrate of claim 8 , wherein the pixel electrode comprises:
a first pixel electrode connected to the thin film transistor through a first contact hole which penetrates the protection layer without penetrating a color filter; and
a second pixel electrode connected to a second thin film transistor through a second contact hole which penetrates the first color filter and the protection layer.
10. The array substrate of claim 9 , wherein the second color filter is formed by an ink-jet process and fills an inner area surrounded by the light blocking member, and
wherein the light blocking member comprises a first portion disposed along the gate line and the data line, and a second portion surrounding the first contact hole.
11. An array substrate comprising:
a substrate;
a gate line and a data line disposed on the substrate;
a thin film transistor electrically connected to the gate line and the data line;
a light blocking member disposed on the substrate;
a plurality of color filters disposed on the substrate; and
a spacing member disposed on a first group of the color filters,
wherein a second group of the color filters is formed by an ink-jet process and fills an area bound by the light blocking member thereby a portion of the second group of the color filters is disposed over the light blocking member, and the spacing member is contiguous with the light blocking member, and
wherein a portion of the thin film transistor is disposed between the substrate and at least one of a first color filter and a second color filter.
12. The array substrate of claim 11 , wherein the first group of the color filters is formed by a photolithography process.