Dual-layer thermally tuned optical device
Embodiments of an optical device, an array of optical devices, and a technique for fabricating the optical device or the array are described. This optical device is implemented using two semiconductor layers (such as silicon), one of which includes a heater and the other includes a thermally tunable optical waveguide. Spatially separating these two functions in the optical device results in more efficient heat transfer between the heater and the optical waveguide, reduced heat transfer to the surroundings, and reduced optical losses in the optical waveguide relative to existing silicon-based optical devices.
1. An optical device, comprising:
a substrate;
a first intermediate layer deposited on the substrate;
a first semiconductor layer, deposited on the first intermediate layer, that includes a heater;
a second intermediate layer deposited on the first semiconductor layer; and
a second semiconductor layer, deposited on the second intermediate layer, that includes a thermally tunable optical waveguide.
2. The optical device of claim 1 , wherein separating the heater in the first semiconductor layer from the optical waveguide in the second semiconductor layer reduces optical loss in the optical waveguide and facilitates implementing additional functions in the optical waveguide.
3. The optical device of claim 1 , further comprising:
a top layer, deposited on the second semiconductor layer, which includes vias from an upper surface of the top layer to the first semiconductor layer; and
electrodes, deposited on the top layer and in the vias, which electrically couple to the first semiconductor layer and thermally couple to the second semiconductor layer.
4. The optical device of claim 1 , wherein the heater in the first semiconductor layer is defined by doping the first semiconductor layer underneath the optical waveguide in the second semiconductor layer.
5. The optical device of claim 4 , wherein the first semiconductor layer includes doped silicon.
6. The optical device of claim 1 , wherein a width of the heater in the first semiconductor layer is wider than a width of the optical waveguide in the second semiconductor layer, thereby facilitating heat transfer between the heater and the optical waveguide.
7. The optical device of claim 1 , wherein power consumption by the heater is less than 20 mW for a 180° phase shift in the optical waveguide.
8. The optical device of claim 1 , further comprising one or more vias in the second intermediate layer, wherein the electrodes are configured to conduct heat from the heater to the optical waveguide through the one or more vias.
9. The optical device of claim 1 , wherein the substrate, the first intermediate layer, the first semiconductor layer, the second intermediate layer, and the second semiconductor layer comprise a dual silicon-on-insulator technology.
10. The optical device of claim 1 , further comprising gaps in the first intermediate layer underneath at least a portion of the heater in the first semiconductor layer, wherein the gaps reduce power consumption associated with thermal tuning of the optical waveguide by reducing thermal coupling between the substrate and the heater.
11. An optical device, comprising:
a substrate;
a first intermediate layer deposited on the substrate;
a first semiconductor layer, deposited on the first intermediate layer, that includes a thermally tunable optical waveguide;
a second intermediate layer deposited on the first semiconductor layer; and
a second semiconductor layer, deposited on the second intermediate layer, that includes a heater.
12. The optical device of claim 11 , wherein the second semiconductor layer includes poly-silicon or amorphous silicon.
13. An array of optical devices, a given optical device comprising:
a substrate;
a first intermediate layer deposited on the substrate;
a first semiconductor layer, deposited on the first intermediate layer, that includes a heater;
a second intermediate layer deposited on the first semiconductor layer; and
a second semiconductor layer, deposited on the second intermediate layer, that includes a thermally tunable optical waveguide.
14. The array of claim 13 , wherein separating the heater in the first semiconductor layer from the optical waveguide in the second semiconductor layer reduces optical loss in the optical waveguide and facilitates implementing additional functions in the optical waveguide.
15. The array of claim 13 , further comprising:
a top layer, deposited on the second semiconductor layer, which includes vias from an upper surface of the top layer to the first semiconductor layer; and
electrodes, deposited on the top layer and in the vias, which electrically couple to the first semiconductor layer and thermally couple to the second semiconductor layer.
16. The array of claim 13 , wherein the heater in the first semiconductor layer is defined by doping the first semiconductor layer underneath the optical waveguide in the second semiconductor layer.
17. The array of claim 13 , wherein a width of the heater in the first semiconductor layer is wider than a width of the optical waveguide in the second semiconductor layer, thereby facilitating heat transfer between the heater and the optical waveguide.
18. The array of claim 13 , further comprising one or more vias in the second intermediate layer, wherein the electrodes are configured to conduct heat from the heater to the optical waveguide through the one or more vias.
19. The array of claim 13 , wherein the substrate, the first intermediate layer, the first semiconductor layer, the second intermediate layer, and the second semiconductor layer comprise a dual silicon-on-insulator technology.
20. The array of claim 13 , further comprising gaps in the first intermediate layer underneath at least a portion of the heater in the first semiconductor layer, wherein the gaps reduce power consumption associated with thermal tuning of the optical waveguide by reducing thermal coupling between the substrate and the heater.