IP Library Granted Patent US 8,054,147
Granted Patent B2
US 8,054,147 · App. 12/416,292 · Granted Nov 8, 2011

High voltage switch and method of making

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Quick Facts
Patent No.
US 8,054,147
App. No.
12/416,292
Granted
Nov 8, 2011
Kind
B2
Abstract

Electrostatic devices, systems and methods are presented. One embodiment is an electrostatic device including a substrate, a first electrode disposed on the substrate, a movable element having a second electrode and a control electrode. The control electrode is disposed in electrostatic communication with the movable element. The control electrode includes a protection layer having resistivity in a range of from about 1 ohm-cm to about 10 kohm-cm.

Claims (31)

1. A device comprising:

a substrate;

a first electrode disposed on the substrate;

a movable element comprising a second electrode;

and

a control electrode comprising a protection layer, the control electrode disposed in electrostatic communication with the movable element, wherein the protection layer has resistivity in a range from about 1 ohm-cm to about 10 kohm-cm,

wherein the movable element is deflectable between a first position in which the second electrode is in conductive electrical communication with the first electrode in response to an electrical field of a first strength established between the control electrode and the movable element, to a second position in which the second electrode is electrically isolated from the first electrode in response to an electrical field of a second strength established between the control electrode and the movable element.

2. The device of claim 1 , wherein the device is a MEMS device or a NEMS device.

3. The device of claim 1 , wherein the protection layer has resistivity in a range from about 1 ohm-cm to about 10 ohm-cm.

4. The device of claim 1 , wherein the protection layer has resistivity in a range from about 10 ohm-cm to about 100 ohm-cm.

5. The device of claim 1 , wherein the protection layer has resistivity in a range from about 100 ohm-cm to about 10 kohm-cm.

6. The device of claim 1 , wherein the protection layer comprises a material having a dielectric constant less than about 20.

7. The device of claim 1 , wherein the protection layer comprises an anodized material.

8. The device of claim 7 , wherein the protection layer comprises an oxide, nitride, titanate, or silicate.

9. The device of claim 7 , wherein the protection layer comprises tantalum oxide.

10. The device of claim 1 , wherein the protection layer comprises an organic material.

11. The device of claim 1 , wherein the protection layer has a thickness of less than about 10 micrometers.

12. The device of claim 1 , wherein the protection layer has a thickness of less than about 1 micrometer.

13. The device of claim 1 , wherein the protection layer has a thickness of less than about 0.5 micrometer.

14. The device of claim 1 , wherein the movable element is a membrane, cantilever, beam, torsional element, or thermal actuator.

15. The device of claim 1 , wherein the movable element comprises a conductive material.

16. The device of claim 1 , wherein the control electrode comprises a metal selected from a group consisting of copper, tungusten, aluminum, gold, tantalum, titanium and alloys containing any of these metals.

17. A system comprising: a circuit board, a plurality of electrostatically activated devices disposed on the circuit board, wherein each of the electrostatically activated device comprises: a substrate; a first electrode disposed on the substrate; a movable element comprising a second electrode; and a control electrode comprising a protection layer, the control electrode disposed in electrostatic communication with the movable element, wherein the protection layer comprises anodized tantalum oxide, wherein the movable element is deflectable between a first position in which the second electrode is in conductive electrical communication with the first electrode in response to an electrical field of a first strength established between the control electrode and the movable element, to a second position in which the second electrode is electrically isolated from the first electrode in response to an electrical field of a second strength established between the control electrode and the movable element, wherein the protection layer has resistivity in a range from about 1 ohm-cm to about 10 kohm-cm.

18. The system of claim 17 , wherein the plurality of electrostatically activated devices are in electrical connection with one another.

19. A method comprising:

providing a substrate;

providing a first electrode disposed on the substrate;

providing a movable element, the movable element comprises a second electrode; and

providing a control electrode comprising a protection layer, the control electrode disposed in electrostatic communication with the movable element, wherein the protection layer has resistivity in a range of from about 100 kohm-cm to about 100 Mohm-cm.

20. The method of claim 19 , wherein providing a control electrode comprises disposing a metal layer over the control electrode.

21. The method of claim 20 , wherein providing a control electrode further comprises anodizing at least a portion of the metal layer to develop the protection layer over the control electrode.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2025
From: GENERAL ELECTRIC COMPANY
To: GE INTELLECTUAL PROPERTY LICENSING, LLC
Reel/Frame 070636/0815 →
CHANGE OF NAME Recorded Mar 26, 2025
From: GE INTELLECTUAL PROPERTY LICENSING, LLC
To: DOLBY INTELLECTUAL PROPERTY LICENSING, LLC
Reel/Frame 070643/0907 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2025
From: DOLBY INTELLECTUAL PROPERTY LICENSING, LLC
To: EDISON INNOVATIONS, LLC
Reel/Frame 070293/0273 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2009
From: HAYS, DAVID CECIL; KEIMEL, CHRISTOPHER FRED; AIMI, MARCO FRANCESCO
To: GENERAL ELECTRIC COMPANY
Reel/Frame 022483/0802 →