Semiconductor device, manufacturing method of semiconductor device, display device, and manufacturing method of display device
A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
1. A semiconductor device comprising a substrate and a semiconductor layer having a channel region, wherein:
the channel region comprises an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
2. The semiconductor device according to claim 1 , wherein the oxide semiconductor comprises In and Zn.
3. The semiconductor device according to claim 2 , wherein the oxide semiconductor further comprises at least one of Ga and Al.
4. The semiconductor device according to claim 1 , wherein the semiconductor layer has a thickness of smaller than 300 nm.
5. The semiconductor device according to claim 1 , wherein mobility of the semiconductor layer is higher than or equal to 0.5 cm 2 /V·s.
6. The semiconductor device according to claim 1 , wherein mobility of the semiconductor layer is higher than or equal to 10 cm 2 /V·s.
7. A display device comprising the semiconductor device according to claim 1 .
8. The display device according to claim 7 , wherein the display device is a light-transmission-type display or a bottom-emission-type light emission display.
9. The display device according to claim 7 , further comprising a transparent gate electrode, wherein at least part of incident light passes through the channel region and the gate electrode.
10. The display device according to claim 7 , wherein at least 50% of incident light passes through the channel region.
11. The display device according to claim 7 , wherein the display device comprises plural semiconductor devices and at least part of the plural semiconductor devices function as switching elements.
12. The display device according to claim 11 , wherein the switching devices perform driving in such a manner that a ratio of on-current to off-current is larger than or equal to 10 6 .
13. The display device according to claim 7 , wherein the display device comprises plural semiconductor devices and at least part of the plural semiconductor devices function as current driving elements for light-emitting elements.
14. The display device according to claim 7 , further comprising a light absorption layer disposed on the light incidence side of the channel region, for absorbing at least part of light having a wavelength range of 400 nm or less of incident light.
15. The display device according to claim 7 , further comprising a light absorption layer disposed on the light incidence side of the channel region, for absorbing at least part of light having a wavelength range of 350 nm or less of incident light.
16. The display device according to claim 14 , wherein the light absorption layer also serves as at least one of the substrate and a polarizing plate.
17. A manufacturing method of a semiconductor device comprising a substrate and a semiconductor layer having a channel region, wherein:
the channel region is formed with an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
18. The manufacturing method of a semiconductor device according to claim 17 , wherein the oxide semiconductor comprises In and Zn.
19. The manufacturing method of a semiconductor device according to claim 18 , wherein the oxide semiconductor further comprises at least one of Ga and Al.
20. The manufacturing method of a semiconductor device according to claim 17 , wherein the semiconductor layer has a thickness of smaller than 300 nm.
21. The manufacturing method of a semiconductor device according to claim 17 , wherein the semiconductor device is produced by forming a film by a precursor solution or a fine particle dispersion liquid for the semiconductor layer and annealing the film by heat or light.
22. The manufacturing method of a semiconductor device according to claim 17 , wherein the semiconductor device is produced by forming a film that satisfies Vc/Va<0.25 and annealing the film by heat or light.
23. The manufacturing method of a semiconductor device according to claim 17 , wherein mobility of the semiconductor layer is higher than or equal to 0.5 cm 2 /V·s.
24. The manufacturing method of a semiconductor device according to claim 17 , wherein mobility of the semiconductor layer is higher than or equal to 10 cm 2 /V·s.
25. A manufacturing method of a display device comprising the semiconductor device manufactured by the manufacturing method according to claim 17 , wherein:
a transparent gate electrode is formed and part of incident light passes through the channel region and the gate electrode.
26. The manufacturing method of a display device according to claim 25 , wherein at least 50% of the incident light passes through the channel region.
27. The manufacturing method of a display device according to claim 25 , wherein a light absorption layer for absorbing at least part of light having a wavelength range of nm or less of the incident light is formed on the light incidence side of the channel region.
28. The manufacturing method of a display device according to claim 25 , a light absorption layer for absorbing at least part of the light having a wavelength range of 350 nm or less of the incident light is formed on the light incidence side of the channel region.
29. The manufacturing method of a display device according to claim 27 , wherein the light absorption layer also serves as at least one of the substrate and a polarizing plate.