Radiation Detector With Asymmetric Contacts
A room temperature radiation detector is made from a semi-insulating Cd 1-x Zn x Te crystal, where 0≦x≦1, having a first electrode made of Pt or Au on one surface of the crystal and a second electrode of Al, Ti or In on another surface of the crystal. In use of the crystal to detect radiation events, an electrical bias is applied between the first and second electrodes.
1 . A room temperature radiation detector comprising:
a semi-insulating Cd 1-x Zn x Te crystal, where 0≦x≦1;
a first electrode made of a deposit of Pt or Au on one surface of the crystal; and
a second electrode made of a deposit of Al, Ti or In on another surface of the crystal.
2 . The radiation detector of claim 1 , wherein the first electrode is the cathode and the second electrode is the anode.
3 . The radiation detector of claim 2 , wherein:
in response to the application of the electrical bias to the first and second electrodes, where the first electrode is at a more negative potential than the second electrode, the first electrode is operative for impeding electron flow and the second electrode is operative for impeding hole flow.
4 . The radiation detector of claim 1 , wherein one of the electrodes is segmented or pixilated.
5 . A method of forming a room temperature radiation detector comprising:
providing a semi-insulating Cd 1-x Zn x Te crystal, where 0≦x≦1;
applying a first electrode made of Pt or Au on one surface of the crystal; and
applying a second electrode made of Al, Ti or In on another surface of the crystal.
6 . The method of claim 5 , wherein the first and second electrodes are deposited on oppositely facing surfaces of the crystal.
7 . The method of claim 5 , wherein the crystal is either an n-type crystal or a p-type crystal.
8 . The method of claim 7 , wherein:
in response to the application of the electrical bias to the first and second electrodes, where the first electrode is at a more negative potential than the second electrode, the first electrode is operative for impeding electron flow and the second electrode is operative for impeding hole flow.
9 . A room temperature radiation detector comprising:
a semi-insulating Cd 1-x Zn x Te crystal, where 0≦x≦1;
a first electrode made of a deposit of a first material on one surface of the crystal, wherein the first material has a work function value≧5.1 eV; and
a second electrode made of a deposit of a second material on another surface of the crystal, wherein the first material has a work function value≦4.33 eV, wherein in response to a suitable electrical bias applied between the first and second electrodes, majority carrier flow is impeded by the first electrode and minority carrier flow is impeded by the second electrode.
10 . The radiation detector of claim 9 , wherein majority carriers in n-type and p-type crystals are electrons and holes, respectively.