Passivated optical detectors with full protection layer

1. An optoelectronic transducer, comprising:

an optoelectronic transducer structure having a first contact and a second contact;

a passivation layer including a polyimide material formed on top of at least a portion of the first contact and on top of at least a portion of the second contact; and

a protection layer formed on top of the passivation layer to substantially cover the passivation layer and configured to protect the passivation layer from external factors.

2. The optoelectronic transducer of claim 1 , further comprising an opening etched downward through the protection layer and the passivation layer above each of the first contact and the second contact, each of the openings exposing a portion of the passivation layer.

3. The optoelectronic transducer of claim 2 , further comprising, first pad metal deposited onto the first contact through the etched opening above the first contact, and second pad metal deposited onto the second contact through the etched opening above the second contact, wherein the first pad metal and second pad metal substantially cover the portions of the passivation layer exposed by the etched openings.

4. The optoelectronic transducer of claim 1 , wherein the protection layer includes one or more of: silicon nitride, silicon dioxide, or silicon oxygen nitride.

5. The optoelectronic transducer of claim 1 , further comprising a first mesa and a second mesa formed in the optoelectronic transducer beneath the passivation layer.

6. The optoelectronic transducer of claim 1 , wherein the protection layer includes metal and is configured to enable the first or second contact to be coupled to a power source.

7. The optoelectronic transducer of claim 1 , wherein the polyimide material is benzocyclobutene (“BCB”).

8. A method of forming an optical detector, the method comprising:

growing a layered semiconductor structure on a substrate;

depositing a passivation layer including a polyimide material on the semiconductor structure, the passivation layer configured to control dark current in the optical detector; and

depositing a protection layer on the passivation layer that substantially covers the entire passivation layer, the protection layer configured to substantially prevent degradation of the passivation layer when the optical detector is exposed to one or more external factors.

9. The method of claim 8 , further comprising, prior to depositing the passivation layer:

forming a first mesa on the semiconductor structure extending from a top of the semiconductor structure to a first layer of the semiconductor structure; and

forming a second mesa on the semiconductor structure extending from the first layer to the substrate.

10. The method of claim 9 , further comprising:

prior to forming the first mesa, forming a first contact on the top of the semiconductor structure; and

prior to forming the second mesa, forming a second contact on the first layer.

11. The method of claim 10 , further comprising, forming a first opening through the protection layer and the passivation layer to the first contact, and forming a second opening through the protection layer and the passivation layer to the second contact, the first and second openings allowing the first and second contacts to be coupled to a power source.

12. The method of claim 11 , further comprising:

depositing first pad metal into the first opening, the first pad metal forming a first contact pad and substantially covering a first portion of the passivation layer exposed during the formation of the first opening; and

depositing second pad metal into the second opening, the second pad metal forming a second contact pad and substantially covering a second portion of the passivation layer exposed during the formation of the second opening.

13. The method of claim 8 , further comprising, exposing the optical detector to one or more external factors.

14. The method of claim 13 , wherein the one or more external factors include at least one of: air, moisture, a chemical, or a force.

15. An optical detector, comprising:

a substrate;

an n-type layer formed on top of the substrate;

an absorption layer formed on top of the n-type layer;

a cap layer formed on top of the absorption layer;

a first mesa etched through the cap layer and absorption layer to the n-type layer;

a second mesa etched through the n-type layer to the substrate;

a first contact formed on top of the cap layer;

a second contact formed on a portion of the n-type layer exposed by etching the first mesa;

a passivation layer including a polyimide material covering at least a portion the first contact, the first mesa, at least a portion of the second contact and the second mesa; and

a protection layer substantially covering the entire passivation layer and configured to substantially prevent exposure of the passivation layer to one or more external factors.

16. The optical detector of claim 15 , wherein the polyimide material is BCB.

17. The optical detector of claim 15 , wherein the protection layer includes one or more of: dielectric, silicon nitride, silicon oxide, silicon oxygen nitride, or metal.

18. The optical detector of claim 15 , wherein the protection layer covers the cap layer and is further configured to prevent light incident on the optical detector from being back reflected.

19. The optical detector of claim 15 , further comprising an opening etched downward through the protection layer and the passivation layer above each of the first contact and the second contact, each of the openings exposing a portion of the passivation layer.

20. The optical detector of claim 19 , further comprising, first pad metal deposited onto the first contact through the etched opening above the first contact, and second pad metal deposited onto the second contact through the etched opening above the second contact, wherein the first pad metal and second pad metal substantially cover portions of the passivation layer exposed by the etched openings.