Substrate based on temperature sensing
View Patent ↗A method for providing accurate temperature sensing of a substrate utilizing the PN junction of a transistor formed on the substrate is described.
1. An arrangement for measuring the temperature of a substrate, the arrangement comprising:
a sensing transistor on the substrate; and
a sensing and control circuit coupled to the sensing transistor, wherein the sensing and control circuit is configured to:
provide a voltage to the emitter of the sensing transistor;
current drive the base of the sensing transistor with a first current I B1 ;
measure a first base emitter voltage V be1 ;
current drive the base of the sensing transistor with a second current I B2 such that I B2 /I B1 equals a constant M;
measure a second base emitter voltage V be2 ; and
determine the temperature T of the substrate using the relationship ΔV be =ηKT/q ln I B2 /I B1 , where ΔV be =V be2 −V be1 , K is Boltzmann's Constant, and emission coefficient η and electron charge q are constants.
2. The arrangement of claim 1 , wherein the sensing transistor comprises a bipolar transistor.
3. The arrangement of claim 1 , wherein the sensing transistor has a first current gain β 1 corresponding to the first base current I B1 and a second current gain β 2 corresponding to the second base current I B2 .
4. The arrangement of claim 3 , wherein β 1 does not equal β 2 .
5. A method of sensing the temperature of a substrate having a sensing transistor formed therein, the method comprising:
current driving the base of the sensing transistor with a first current;
measuring a base emitter voltage first response to the first current;
current driving the base of the sensing transistor with a second current, wherein the second current has a predetermined relationship with the first current;
measuring a base emitter voltage second response to the second current; and
determining the temperature of the substrate, wherein the only measurements said determining uses are the first and second responses.
6. The method of claim 5 , wherein said method comprises using a PN junction of the sensing transistor.
7. The method of claim 5 , wherein the predetermined relationship between the first current I B1 and the second current I B2 is I B1 =I B2 /M, where M is a constant.
8. The method of claim 7 , wherein said determining the temperature T of the substrate uses the relationship ΔV be =ηKT/q ln I B2 /I B1 , where K is Boltzmann's Constant, emission coefficient η and electron charge q are constants, and ΔV be equals the second response V be2 minus the first response V be1 .
9. An arrangement for measuring the temperature of a substrate, the arrangement comprising:
a substrate having a sensing transistor formed therein; and
a sensing and control circuit configured to operate the sensing transistor by current driving the base of the sensing transistor with a first current, measuring a base emitter voltage first response to the first current, current driving the base of the sensing transistor with a second current, and measuring a base emitter voltage second response to the second current, wherein the second current has a predetermined relationship with the first current, and wherein the sensing and control circuit is further configured to determine the temperature of the substrate using the first and second responses.
10. The arrangement of claim 9 , wherein the sensing transistor comprises a bipolar transistor.
11. The arrangement of claim 9 , wherein the sensing transistor comprises a PN junction.
12. The arrangement of claim 9 , wherein the sensing transistor comprises a collector tied to ground.
13. The arrangement of claim 9 , wherein the sensing transistor comprises an emitter referenced to a common voltage V.
14. The arrangement of claim 9 , wherein the sensing transistor is integrated into a microprocessor.
15. The arrangement of claim 9 , wherein the predetermined relationship between the first current I B1 and the second current I B2 is I B1 =I B2 /M.
16. The arrangement of claim 15 , wherein the temperature T of the substrate is configured to be determined using the relationship ΔV be =ηKT/q ln I B2 /I B1 , where K is Boltzmann's Constant, emission coefficient η and electron charge q are constants, and ΔV be equals the second response V be2 minus the first response V be1 .
17. The arrangement of claim 9 , wherein the sensing transistor has a first current gain β 1 corresponding to the first base current I B1 and a second current gain β 2 corresponding to the second base current I B2 .
18. The arrangement of claim 17 , wherein β 1 does not equal β 2 .