Solid-state image pickup device for preventing cross-talk between adjacent pixels and manufacturing method thereof
View Patent ↗A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the predetermined position of a lower layer region of the vertical transfer register and a channel stop region. This P type region adjusts potential in the lower layer region of the vertical transfer register and the channel stop region. Accordingly, since the potential in the lower layer region of the vertical transfer register and the channel stop region at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.
1. A solid-state image pickup device comprising:
a photosensor portion formed on the surface of a substrate to convert incident light into electric charges;
a transfer portion formed on the surface of said substrate to transfer said electric charges read out from said photosensor portion; and
an overflow barrier formed within said substrate to discharge unnecessary electric charges of said electric charges,
wherein a potential in an overflow barrier under said transfer portion is smaller than that in an overflow barrier under said photosensor portion.
2. A solid-state image pickup device comprising:
a photosensor portion formed on the surface of a substrate to convert incident light into electric charges;
a transfer portion formed on the surface of said substrate to transfer said electric charges read out from said photosensor portion; and
an overflow barrier formed within said substrate to discharge unnecessary electric charges of said electric charges,
wherein a potential in an overflow barrier under said transfer portion is smaller than that in an overflow barrier under said photosensor portion, and
wherein a region of the overflow barrier that is under the photosensor portion has a doping concentration lower than other regions of the overflow barrier.
3. A method of manufacturing a solid-state image pickup device comprising:
providing a photosensor portion formed on the surface of a substrate to convert incident light into electric charges;
providing a transfer portion formed on the surface of said substrate to transfer said electric charges read out from said photosensor portion and an overflow barrier formed within said substrate to discharge unnecessary electric charges of said electric charges,
wherein a potential in an overflow barrier under said transfer portion is smaller than that in an overflow barrier under said photosensor portion, and
wherein the method further comprises the process of forming one or a plurality of impurity regions on a lower layer of said transfer portion in said substrate.
4. A method of manufacturing a solid-state image pickup device according to claim 3 , further comprising the process of forming one or a plurality of second impurity regions on a lower layer of said photosensor portion.
5. A method of manufacturing a solid-state image pickup device according to claim 4 , further comprising the process of forming said one or a plurality of second impurity regions at the positions with depths different from that of said impurity region.
6. A method of manufacturing a solid-state image pickup device comprising:
providing a photosensor portion formed on the surface of a substrate to convert incident light into electric charges;
providing a transfer portion formed on the surface of said substrate to transfer said electric charges read out from said photosensor portion and an overflow barrier formed within said substrate to discharge unnecessary electric charges of said electric charges,
forming one or a plurality of impurity regions on a lower layer of said transfer portion in said substrate, and
forming, under the photosensor portion, a low concentration region of the overflow barrier,
wherein a potential in an overflow barrier under said transfer portion is smaller than that in an overflow barrier under said photosensor portion, and
wherein the low concentration region of the overflow barrier that is under the photosensor portion has a doping concentration lower than other regions of the overflow barrier.