Method of manufacturing a display substrate and method of manufacturing a display apparatus using the same

1. A method of manufacturing a display substrate, the method comprising:

forming a gate line, a data line crossing the gate line, and a switching device on a base substrate, the switching device electrically connected to the gate line and the data line;

sequentially forming a passivation layer, a first resist layer, and a second resist layer on the base substrate;

patterning the second resist layer using a developing solution to form an etch-stop pattern;

patterning the first resist layer using the etch-stop pattern and the developing solution to form a resist pattern, the etch-stop pattern having a sidewall protruding over a sidewall of the resist pattern;

after the patterning the first resist layer, removing a portion of the passivation layer using the resist pattern and the etch-stop pattern to form a contact hole on a drain electrode of the switching device;

forming a pixel electrode electrically connected to the switching device through the contact hole; and

removing the first and second resist layers,

wherein the first resist layer comprises a non-photosensitive resist composition, and the second resist layer comprises a photosensitive resist composition.

2. The method of claim 1 , wherein the non-photosensitive resist composition comprises:

an alkali-soluble polymer having a repeating unit including at least one of a hydroxyl group and a carboxyl group; and

an organic solvent.

3. The method of claim 2 , wherein the photosensitive resist composition comprises:

an alkali-soluble resin containing a phenol-based hydroxyl group;

a photoreactive compound; and

an organic solvent configured to dissolve the alkali-soluble polymer and the photoreactive compound without dissolving the alkali-soluble polymer of the non-photosensitive resist composition.

4. The method of claim 3 , wherein the organic solvent of the photosensitive resist composition comprises at least one of heptanone, cyclohexanone, 2-hydroxyisobutyric acid methyl ester and lactone.

5. The method of claim 1 , wherein patterning the second resist layer further comprises:

irradiating light onto the base substrate through a mask disposed on the base substrate; and

developing the second resist layer with the developing solution to form the etch-stop pattern; and

wherein the patterning the first resist layer further comprises dissolving a portion of the first resist layer exposed through the etch-stop pattern using the developing solution, so as to form the resist pattern.

6. The method of claim 1 , wherein the patterning further comprises forming the etch-stop pattern by developing the second resist layer to form a first thickness layer and a second thickness layer, the first thickness layer at least partially overlapping the gate line, the data line and the switching device, the second thickness layer at least partially overlapping a pixel electrode area.

7. The method of claim 6 , wherein the forming a pixel electrode further comprises:

removing the second thickness portion, a portion of the resist pattern formed on the pixel electrode area, and a portion of the first thickness portion, so as to form a remaining pattern exposing the passivation layer on the pixel electrode area;

forming a transparent electrode layer on the base substrate, the transparent electrode layer making contact with the drain electrode of the switching device; and

removing a portion of the transparent electrode layer on the remaining pattern, so as to pattern the transparent electrode layer.

8. The method of claim 7 , wherein the portion of the transparent electrode layer formed on the remaining pattern is separate from a portion of the transparent electrode layer formed on the passivation layer.

9. The method of claim 7 , wherein the forming of the switching device further comprises:

forming the gate line and a gate electrode of the switching device, the gate electrode of the switching device being connected to the gate line;

forming a gate insulation layer on the gate line and the gate electrode; and

forming the data line, a source electrode of the switching device, and the drain electrode, the source electrode being connected to the data line, the drain electrode being spaced apart from the source electrode.

10. The method of claim 9 , wherein one or more of the resist pattern and the etch-stop pattern exposes portions of the passivation layer that are formed on a gate pad electrode and a data pad electrode.

11. The method of claim 10 , further comprising:

removing portions of the gate insulation layer and the passivation layer that are formed on the gate pad electrode; and

removing a portion of the passivation layer formed on the data pad electrode.

12. The method of claim 11 , wherein the pixel electrode includes a first transparent electrode making contact with the gate pad electrode, and a second transparent electrode making contact with the data pad electrode.

13. The method of claim 12 , wherein the transparent electrode layer formed on the remaining pattern is separated from the first transparent electrode due to a step discontinuity between the first transparent electrode and the transparent electrode layer formed on the remaining pattern, and the transparent electrode layer formed on the remaining pattern is separated from the second transparent electrode due to a step discontinuity between the second transparent electrode and the transparent electrode layer formed on the remaining pattern.

14. A method of manufacturing a display apparatus, the method comprising:

on a first base substrate, forming a gate line, a data line crossing the gate line, and a switching device electrically connected to the gate line and the data line;

sequentially forming a passivation layer, a first resist layer and a second resist layer on the first base substrate;

patterning the second resist layer using a developing solution to form an etch-stop pattern;

patterning the first resist layer using the etch-stop pattern and the developing solution to form a resist pattern, the etch-stop pattern having a sidewall protruding from a sidewall of the resist pattern;

after the patterning the first resist layer, removing a portion of the passivation layer using the resist pattern and the etch-stop pattern, to form a contact hole on a drain electrode of the switching device;

forming a pixel electrode electrically connected to the switching device through the contact hole;

forming a common electrode layer on a second base substrate, wherein the second base substrate is facing the first base substrate; and

removing the first and second resist layers,

wherein the first resist layer comprises a non-photosensitive resist composition and the second resist layer comprises a photosensitive resist composition.

15. The method of claim 14 , wherein the non-photosensitive resist composition comprises:

an alkali-soluble polymer having a repeating unit including at least one of a hydroxyl group and a carboxyl group; and

an organic solvent.

16. The method of claim 15 , wherein the photosensitive resist composition comprises:

an alkali-soluble resin including a phenol-based hydroxyl group;

a photoreactive compound; and

an organic solvent configured to dissolve the alkali-soluble polymer and the photoreactive compound without dissolving the alkali-soluble polymer of the non-photosensitive resist composition.

17. The method of claim 16 , wherein the organic solvent of the photosensitive resist composition comprises at least one of heptanone, cyclohexanone, 2-hydroxyisobutyric acid methyl ester, and lactone.