System, method and apparatus for strain-assisted magnetic recording for controlling switching field and tightening switching field distribution in bit patterned media
View Patent ↗Multilayer magnetic structures control the switching field and tighten the switching field distribution in bit patterned media. A strain-inducing layer is excited, e.g., by a localized magnetic field or a localized thermal heating or a voltage, and induces a strain on the magnetic layer(s) of the patterned bit to initiate switching of the bit magnetization. The strain induced on the magnetic layer forces a rotation or an amplitude variation of the magnetic layer anisotropy. A localized magnetic field is simultaneously or subsequently applied to complete the switching of the bit magnetization. The invention provides control of switching field and switching field distribution for bit-patterned media devices.
1. A system for strain-assisted recording for controlling a reversal mechanism and tightening a switching field distribution in non-continuous, bit patterned media, comprising:
a seed layer having a soft underlayer (SUL);
a buffer layer on the seed layer;
a pair of strain-inducing layers (SIL) comprising a shape memory alloy;
a magnetic media layer (ML) between the pair of SIL, the ML having a uniaxial anisotropy, the ML comprises at least one transition metal selected from the group consisting of Co, Fe and Ni, at least one 5d metal selected from the group consisting of Pt and Pd, at least one rare earth metal selected from the group consisting of Tb, Dy and Sm, at least one segregant selected from the group consisting of B, Cr, SiO x and TaO x , or a combination of alloys and multilayers;
a cap layer on the ML;
the SIL induces a strain on the ML, such that a structural change applied to the ML generates a rotation or an amplitude variation of an anisotropy of the ML;
wherein the system comprises a non-continuous, bit patterned media.
2. A system according to claim 1 , wherein the ML comprises at least one of a multilayer, alloy, amorphous, crystalline and polycrystalline material.
3. A system according to claim 1 , wherein the SIL is a magnetostrictive material selected from the group consisting of: SmDyFe, Tb1-xFex, Fe3Pt and Fe/Pt, whose lattice is distorted when a write field is applied.
4. A system according to claim 1 , wherein the SIL is magnetic or nonmagnetic, and is characterized by a large structural change at temperatures between 350 and 700 Kelvin.
5. A system according to claim 1 , wherein the SIL has a piezoelectric layer whose lattice parameters change with an applied voltage.
6. A system for strain-assisted recording for controlling a reversal mechanism and tightening a switching field distribution in non-continuous, bit patterned media, comprising:
a seed layer having a soft underlayer (SUL);
a buffer layer on the seed layer;
a pair of strain-inducing layers (SIL) comprising a shape memory alloy;
a magnetic media layer (ML) between the pair of SIL, the ML having a uniaxial anisotropy, and the ML comprising at least one of a multilayer, alloy, amorphous, crystalline and polycrystalline material, at least one transition metal selected from the group consisting of Co, Fe and Ni, at least one 5d metal selected from the group consisting of Pt and Pd, at least one rare earth metal selected from the group consisting of Tb, Dy and Sm, at least one segregant selected from the group consisting of B, Cr, SiO x and TaO x , or a combination of alloys and multilayers;
a cap layer on the ML; and
the SIL induces a strain on the ML, such that a structural change applied to the ML generates a rotation or an amplitude variation of an anisotropy of the ML;
wherein the system comprises a non-continuous, bit patterned media.
7. A system according to claim 6 , wherein the SIL is a magnetostrictive material selected from the group consisting of: SmDyFe, Tb1-xFex, Fe3Pt and Fe/Pt, whose lattice is distorted when a write field is applied.
8. A system according to claim 6 , wherein the SIL is magnetic or nonmagnetic, is characterized by a large structural change at temperatures between 350 and 700 Kelvin, and the SIL has a piezoelectric layer whose lattice parameters change with an applied voltage.