Light emitting diode, backlight assembly having the same and method thereof

1. A light emitting diode (LED) comprising:

a base including a cavity;

an LED chip disposed on a bottom of the cavity and configured to generate a first light; and

a light conversion layer including an upper substrate, a lower substrate and a wavelength conversion particle disposed between the upper substrate and the lower substrate, the light conversion layer configured to convert a portion of the first light into a second light according to light emitted by the wavelength conversion particle;

wherein the light conversion layer is disposed on an upper surface of the base, and

wherein the light conversion layer includes an organic solution filling a gap between the upper substrate and the lower substrate, and the wavelength conversion particle dispersed within the organic solution.

2. The light emitting diode of claim 1 , wherein the light conversion layer further comprises sealing materials sealing a joint portion between the upper substrate and the lower substrate.

3. The light emitting diode of claim 1 , wherein the wavelength conversion particle comprises quantum dots, the quantum dots including at least one material selected from among group II, III, V and VI compound semiconductors.

4. The light emitting diode of claim 3 , wherein the first light has a wavelength in a range of about 440 nm to about 500 nm, and the second light has a wavelength in a range of about 520 nm to about 560 nm.

5. The light emitting diode of claim 3 , wherein the first light has a wavelength in a range of about 440 nm to about 500 nm, and the second light has a wavelength in a range of about 630 nm to about 660 nm.

6. The light emitting diode of claim 3 , wherein the first light has a wavelength in a range of about 300 nm to about 400 nm, and the second light has a wavelength in a range of about 440 nm to about 500 nm.

7. The light emitting diode of claim 3 , wherein the first light has a wavelength in a range of about 300 nm to about 400 nm, and the second light has a wavelength in a range of about 520 nm to about 560 nm.

8. The light emitting diode of claim 3 , wherein the first light has a wavelength in a range of about 300 nm to about 400 nm, and the second light has a wavelength in a range of about 630 nm to about 660 nm.

9. The light emitting diode of claim 3 , wherein the upper substrate and the lower substrate are each generally transparent and comprise one of glass, plastic and resin.

10. The light emitting diode of claim 3 , wherein the organic solution comprises at least one of toluene, chloroform and ethanol.

11. A light emitting diode (LED) comprising:

a base including a cavity, the cavity having a bottom and an opening;

an LED chip disposed on the bottom and configured to generate a first light; and

a light conversion layer including an upper substrate, a middle substrate, a lower substrate disposed between the upper substrate and the lower substrate, a sealing material disposed at an edge portion between the upper substrate and the lower substrate and an organic solution with a wavelength conversion particle; dispersed within the organic solution

wherein:

the light conversion layer is disposed on an upper surface of the base; and

the organic solution with the wavelength conversion particle fills gaps formed between the upper substrate and the middle substrate, and between the middle substrate and the lower substrate.

12. The light emitting diode of claim 11 , wherein the organic solution between the middle substrate and the lower substrate converts a portion of the first light into a second light, and the organic solution between the middle substrate and the upper substrate converts a portion of the first light into a third light.

13. The light emitting diode of claim 12 , wherein the wavelength conversion particle comprises quantum dots, the quantum dots including at least one of group II, III, V and VI compound semiconductors.

14. The light emitting diode of claim 13 , wherein the first light has a wavelength in a range of about 440 nm to about 500 nm, the second light has a wavelength in a range of about 630 nm to about 660 nm, and the third light has a wavelength in a range of about 520 nm to about 560 nm.

15. The light emitting diode of claim 13 , wherein the upper substrate, the middle substrate, and the lower substrate are each generally transparent and comprise at least one of glass, plastic and resin.

16. A backlight assembly comprising:

a light emitting diode (LED) including:

a base including a cavity with a bottom and an opening;

an LED chip disposed on the bottom and configured to generate a first light; and

a light conversion layer including an upper substrate, a lower substrate, and a wavelength conversion particle disposed between the upper substrate and the lower substrate, the light conversion layer configured to convert a portion of the first light into a second light;

an optical sheet disposed above the light emitting diode; and

a receiving container receiving the light emitting diode and the optical sheet;

wherein the light conversion layer is disposed on an upper surface of the base, the light conversion layer comprises an organic solution filling a gap between the upper substrate and the lower substrate, and the wavelength conversion particle is dispersed within the organic solution.

17. The backlight assembly of claim 16 , wherein the wavelength conversion particle comprises quantum dots, the quantum dots including at least of group II, III, V and VI compound semiconductors.

18. The backlight assembly of claim 17 , wherein a pair of the LEDs comprises:

a blue-green LED, the first light of the blue-green LED emitting light having a wavelength in a range of about 440 nm to about 500 nm, and the second light of the blue-green LED emitting light having a wavelength in a range of about 520 nm to about 560 nm; and

a blue-red LED, the first light of the blue-red LED emitting light having a wavelength in a range of about 440 nm to about 500 nm, and the second light of the blue-red LED emitting light having a wavelength in a range of about 630 nm to about 660 nm.

19. A backlight assembly comprising:

a light emitting diode (LED) including:

a base including a cavity with a bottom and an opening;

an LED chip disposed on the bottom and configured to generate a first light; and

a light conversion layer including an upper substrate, a middle substrate, a lower substrate, and a wavelength conversion particle disposed between the upper substrate and the middle substrate and between the middle substrate and the lower substrate, the light conversion layer configured to convert a portion of the first light into a second light;

an optical sheet disposed above the light emitting diode; and

a receiving container receiving the light emitting diode and the optical sheet;

wherein the light conversion layer is disposed on an upper surface of the base, and an organic solution fills gaps formed between the upper substrate and the middle substrate, and between the middle substrate and the lower substrate.

20. The backlight assembly claim of 19 , wherein the organic solution between the middle substrate and the lower substrate converts a portion of the first light into a second light, and the organic solution between the middle substrate and the upper substrate converts a portion of the first light into a third light.

21. The light emitting diode of claim 20 , wherein the wavelength conversion particle comprises quantum dots, the quantum dots including at least one of group II, III, V and VI compound semiconductors.

22. The light emitting diode of claim 21 , wherein the first light has a wavelength in a range of about 440 nm to about 500 nm, the second light has a wavelength in a range of about 630 nm to about 660 nm, and the third light has a wavelength in a range of about 520 nm to about 560 nm.

23. A method of manufacturing a light emitting diode comprising:

providing an upper substrate of a light conversion layer and a second substrate of the light conversion layer, each of which are transparent and comprise one or more of glass, plastic and resin;

filling a gap formed between the upper substrate and the second substrate with a wavelength conversion particle dispersed in an aqueous solution;

providing a base, the base including a cavity with a bottom and an opening, and an LED chip disposed on the bottom and configured to generate a first light; and

placing the light conversion layer on an upper surface of the base.

24. The method of claim 20 , wherein the wavelength conversion particle comprises quantum dots, the quantum dots including at least one of group II, III, V and VI compound semiconductors.

25. The light emitting diode of claim 1 , further comprising a resin covering the LED chip and filling the cavity.

26. The light emitting diode of claim 11 , further comprising a resin covering the LED chip and filling the cavity, wherein the sealing materials seal each joint portions between the upper substrate and the middle substrate and between the middle substrate and the lower substrate.

27. The backlight assembly of claim 16 , wherein the light emitting diode further comprises a resin covering the LED chip and filling the cavity, and sealing materials seal a joint portion between the upper substrate and the lower substrate.

28. The backlight assembly of claim 19 , wherein the light emitting diode further comprises a resin covering the LED chip and filling the cavity, and sealing materials seal each joint portions between the upper substrate and the middle substrate and between the middle substrate and the lower substrate.

29. The method of claim 23 , further comprising sealing a joint portion between the upper substrate and the lower substrate with sealing materials, and covering the LED chip and filling the cavity using a resin.