Precise metrology with adaptive milling
View Patent ↗A method of measuring a three-dimensional device in a wafer is provided. The method comprises the step of forming a trench in the wafer. The trench has a facet passing through the three-dimensional device a predetermined offset from a desired image position. The method further comprises iteratively, until a remaining distance between the facet and the desired image position is less than a predetermined threshold, adjusting one or more parameters of a polishing beam based on the remaining distance, polishing the facet with the polishing beam to position the facet closer to the desired image position, and measuring the remaining distance.
1. A method of measuring a three-dimensional device in a wafer, comprising the steps of:
forming a trench in the wafer, the trench having a facet passing through the three-dimensional device a predetermined offset from a desired image position; and
iteratively, until a remaining distance between the facet and the desired image position is less than a predetermined threshold:
adjusting one or more parameters of a polishing beam based on the remaining distance,
polishing the facet with the polishing beam to position the facet closer to the desired image position, and
measuring the remaining distance.
2. The method according to claim 1 , wherein adjusting the one or more parameters of the polishing beam comprises adjusting an intensity of the polishing beam.
3. The method according to claim 1 , wherein adjusting the one or more parameters of the polishing beam comprises adjusting a position of the polishing beam.
4. The method according to claim 3 , wherein the position d 2 of the polishing beam is adjusted according to the equation:
d 2 =d 1 +δd 1 −β( I 0 −I ),
where d 1 is a position of the facet before adjusting the position of the polishing beam, δd 1 is the remaining distance, β is a diameter of the polishing beam, I 0 is an initial intensity of the polishing beam, and I is an adjusted intensity of the polishing beam.
5. The method according to claim 1 , further comprising the step of:
measuring a distance between the facet and the desired image position before iteratively adjusting, polishing and measuring.
6. The method according to claim 1 , further comprising the step of:
imaging the facet after the remaining distance is less than the predetermined threshold.
7. The method according to claim 6 , wherein imaging the facet comprises imaging the facet with a scanning electron microscope.
8. The method according to claim 1 , wherein the trench is formed with a focused ion beam.
9. The method according to claim 1 , wherein the three-dimensional device is a write pole of a magnetic recording head.
10. A method of measuring a three-dimensional device in a wafer, comprising the steps of:
forming a trench in the wafer, the trench having a facet passing through the three-dimensional device a predetermined offset from a desired image position;
adjusting one or more parameters of a polishing beam based on the predetermined offset;
polishing the facet with the polishing beam to position the facet closer to the desired image position;
measuring a remaining distance between the facet and the desired image position;
adjusting one or more parameters of the polishing beam based on the remaining distance;
polishing the facet with the polishing beam to position the facet closer to the desired image position; and
imaging the facet.
11. The method according to claim 10 , wherein adjusting the one or more parameters of the polishing beam comprises adjusting an intensity of the polishing beam.
12. The method according to claim 10 , wherein adjusting the one or more parameters of the polishing beam comprises adjusting a position of the polishing beam.
13. The method according to claim 12 , wherein the position d of the polishing beam is adjusted according to the equation:
d 2 =d 1 +δd 1 −β( I 0 −I ),
where d 1 is a position of the facet before adjusting the position of the polishing beam, δd 1 is the remaining distance, β is a diameter of the polishing beam, I 0 is an initial intensity of the polishing beam, and I is an adjusted intensity of the polishing beam.
14. The method according to claim 10 , further comprising the step of:
measuring a distance between the facet and the desired image position before the first adjusting step.
15. The method according to claim 10 , wherein imaging the facet comprises imaging the facet with a scanning electron microscope.
16. The method according to claim 10 , wherein the trench is formed with a focused ion beam.
17. The method according to claim 10 , wherein the three-dimensional device is a write pole of a magnetic recording head.
18. A machine readable medium carrying one or more sequences of instructions for measuring a three-dimensional device in a wafer, wherein execution of the one or more sequences of instructions by one or more processors causes the one or more processors to perform the steps of:
forming a trench in the wafer, the trench having a facet passing through the three-dimensional device a predetermined offset from a desired image position; and
iteratively, until a remaining distance between the facet and the desired image position is less than a predetermined threshold:
adjusting one or more parameters of a polishing beam based on the remaining distance,
polishing the facet with the polishing beam to position the facet closer to the desired image position, and
measuring the remaining distance.