Apparatus and methods for manufacturing thin-film solar cells
View Patent ↗Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.
1. A method of depositing a thin film semiconductor layer onto a flexible substrate, comprising:
transporting a substrate web through a multi-zone deposition region,
depositing onto the web, within a first substantially enclosed gallium indium deposition zone, a first layer of gallium indium in the presence of selenium gas,
depositing onto the web, after depositing the first layer of gallium indium and within a first substantially enclosed copper deposition zone, a first layer of copper in the presence of selenium gas,
depositing onto the web, after depositing the first layer of copper and within a second substantially enclosed gallium indium deposition zone, a second layer of gallium indium in the presence of selenium gas,
monitoring by x-ray fluorescence a characteristic of one or more layers deposited on the web, and
adjusting a deposition rate in one of the zones based on data generated from the monitoring step, wherein the monitoring step is performed before depositing the second layer of gallium indium.
2. The method of claim 1 , wherein the depositing steps are carried out by effusing material from heated sources, the adjusting step including changing a heater temperature in one of the zones.
3. The method of claim 2 , wherein the changing step is carried out while the web translates through the multi-zone deposition region.
4. The method of claim 2 , wherein the changing step is carried out in the first substantially enclosed gallium indium deposition zone.
5. The method of claim 2 , wherein the changing step is carried out in the second substantially enclosed gallium indium deposition zone.
6. The method of claim 2 , wherein the changing step is carried out in the first enclosed copper deposition zone.
7. The method of claim 1 , wherein the amount of gallium indium deposited in the second substantially enclosed gallium indium deposition zone is less than about 50% of the amount of gallium indium deposited in the first substantially enclosed gallium indium deposition zone.
8. The method of claim 1 , wherein the amount of gallium indium deposited in the second substantially enclosed gallium indium deposition zone is less than about 10% of the amount of gallium indium deposited in the first substantially enclosed gallium indium deposition zone.
9. The method of claim 1 , further comprising
monitoring by x-ray fluorescence a characteristic of one or more layers deposited on the web after the last step of depositing gallium indium.
10. The method of claim 1 , further comprising
depositing onto the web, after depositing the second layer of copper and within a third substantially enclosed gallium indium deposition zone, a second layer of gallium indium in the presence of selenium gas.
11. The method of claim 10 , wherein the combined amount of gallium indium deposited in the second and third substantially enclosed gallium indium deposition zones is less than about 50% of the amount of gallium indium deposited in the first substantially enclosed gallium indium deposition zone.
12. The method of claim 10 , wherein the combined amount of gallium indium deposited in the second and third substantially enclosed gallium indium deposition zones is less than about 10% of the amount of gallium indium deposited in the first substantially enclosed gallium indium deposition zone.
13. The method of claim 1 , wherein the multi-zone deposition region has multiple adjacent processing zones running parallel to the direction of web travel, the monitoring step including detecting nonuniformity of deposited layers between adjacent processing zones, and initiating appropriate heating changes to produce more uniform layer thickness between adjacent processing zones.
14. A method of depositing a thin film semiconductor layer onto a flexible substrate, comprising:
transporting a substrate web through a multi-zone deposition region,
depositing onto the web, within a first substantially enclosed gallium indium deposition zone, a first layer of gallium indium in the presence of selenium gas,
depositing onto the web, after depositing the first layer of gallium indium and within a first substantially enclosed copper deposition zone, a first layer of copper in the presence of selenium gas,
depositing onto the web, after depositing the first layer of copper and within a second substantially enclosed copper deposition zone, a second layer of copper in the presence of selenium gas,
depositing onto the web, after depositing the second layer of copper and within a second substantially enclosed gallium indium deposition zone, a second layer of gallium indium in the presence of selenium gas,
monitoring by x-ray fluorescence, between the steps of deposition the first and second layers of copper, a characteristic of one or more layers deposited on the web, and
adjusting a deposition rate in one of the zones based on data generated from the monitoring step, wherein the monitoring step is performed before depositing the second layer of gallium indium.
15. A method of depositing a thin film semiconductor layer onto a flexible substrate, comprising:
transporting a substrate web through a multi-zone deposition region,
depositing onto the web, within a first substantially enclosed gallium indium deposition zone, a first layer of gallium indium in the presence of selenium gas,
depositing onto the web, after depositing the first layer of gallium indium and within a first substantially enclosed copper deposition zone, a first layer of copper in the presence of selenium gas,
depositing onto the web, after depositing the first layer of copper and within a second substantially enclosed copper deposition zone, a second layer of copper in the presence of selenium gas,
depositing onto the web, after depositing the second layer of copper and within a second substantially enclosed gallium indium deposition zone, a second layer of gallium indium in the presence of selenium gas, and
monitoring a characteristic of one or more layers deposited on the web at multiple monitoring stations along the process.
16. The method of claim 15 , wherein the monitoring step includes using x-ray fluorescence.
17. The method of claim 15 , wherein the monitoring step is carried out between the steps of depositing the first and second layers of copper, and after depositing the second layer of gallium indium.