Organic light emitting diode display with improved on-current, and method for manufacturing the same
View Patent ↗An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.
1. A method for manufacturing an organic light emitting device, the method comprising:
disposing a switching control electrode and a driving control electrode on a substrate;
disposing a driving gate insulating layer on the driving control electrode;
surface-treating the driving gate insulating layer with a nitrogen-containing gas;
disposing a first amorphous silicon layer on the driving gate insulating layer;
crystallizing the first amorphous silicon layer to form a driving semiconductor;
disposing a driving input electrode and a driving output electrode on the driving semiconductor;
disposing a switching gate insulating layer on the driving input electrode, the driving output electrode and the switching control electrode;
disposing a switching semiconductor on the switching gate insulating layer;
disposing a switching input electrode and a switching output electrode on the switching semiconductor;
disposing a pixel electrode electrically connected to the driving output electrode;
disposing an emission layer on the pixel electrode; and
disposing a common electrode on the emission layer,
wherein a concentration of nitrogen in an interface between the driving gate insulating layer and the driving semiconductor is between about 0.06 atomic percent to about 4.75 atomic percent, based on a total composition of the driving gate insulating layer.
2. The method of claim 1 , wherein the driving gate insulating layer comprises silicon oxide.
3. The method of claim 2 , wherein the disposing of the driving semiconductor comprises doping at least a portion of the first amorphous silicon layer.
4. The method of claim 3 , wherein the doping of the first amorphous silicon layer comprises:
disposing a doping stopper overlapping the driving control electrode on the first amorphous silicon layer; and
doping the first amorphous silicon layer with an n-type or p-type impurity,
wherein the first amorphous silicon layer is patterned after crystallizing the first amorphous silicon layer.
5. The method of claim 3 , wherein the doping of the first amorphous silicon layer comprises:
disposing a doping stopper overlapping the driving control electrode on the first amorphous silicon layer;
doping the first amorphous silicon layer with an n-type or p-type impurity; and
patterning the first amorphous silicon layer to form a patterned first amorphous silicon layer,
wherein a width of the doping stopper is narrower than a width of the patterned first amorphous silicon layer.
6. The method of claim 5 , wherein the first amorphous silicon layer is crystallized by a solidification crystallization process.
7. The method of claim 6 , wherein the solidification crystallization process is executed at a temperature between about 650° C. to about 750° C.
8. The method of claim 1 , wherein the nitrogen-containing gas comprises ammonia gas.
9. The method of claim 1 , wherein the substrate is pre-compacted.
10. The method of claim 1 , wherein the surface-treating the driving gate insulating layer comprises surface-treating the driving gate insulating layer by plasma using an ammonia gas.
11. The method of claim 1 , wherein the nitrogen-containing gas comprises nitrogen, nitrous oxide, nitric oxide, ammonia, or a combination comprising at least one of the foregoing nitrogen containing gases.