Acoustic wave device
View Patent ↗An acoustic wave device includes a piezoelectric substrate having a surface adapted to allow a leaky surface wave to propagate thereon, an interdigital electrode provided on a portion of the surface of the piezoelectric substrate, and a dielectric layer provided on the surface of the piezoelectric substrate to cover the interdigital electrode. The piezoelectric substrate is made of lithium niobate. The dielectric layer is made of tantalum pentoxide. The piezoelectric substrate is made of a rotated Y-cut substrate having a cut angle which is not smaller than 2.5 degrees and is not larger than 22.5 degrees. A ratio H/λ of a film thickness H of the dielectric layer to a wavelength λ of a center frequency of the leaky surface wave ranges from 0.034 to 0.126. This acoustic wave device works in a wide band width.
1. An acoustic wave device comprising:
a piezoelectric substrate made of lithium niobate and having a surface adapted to allow a leaky surface wave to propagate thereon;
an interdigital electrode made of aluminum and provided on a portion of the surface of the piezoelectric substrate; and
a dielectric layer made of tantalum pentoxide provided on the surface of the piezoelectric substrate to cover the interdigital electrode, wherein
the piezoelectric substrate is made of a rotated Y-cut substrate having a cut angle which is not smaller than 2.5 degrees and is not larger than 22.5 degrees, and
a ratio H/λ of a film thickness H of the dielectric layer to a wavelength λ of a center frequency of the leaky surface wave ranges from 0.034 to 0.126.
2. The acoustic wave device according to claim 1 , wherein the cut angle is not smaller than 2.5 degrees and is smaller than 7.5 degrees.
3. The acoustic wave device according to claim 1 , wherein the cut angle is not smaller than 7.5 degrees and is smaller than 12.5 degrees, and the ratio H/λ ranges from 0.0344 to 0.126.
4. The acoustic wave device according to claim 1 , wherein the cut angle is not smaller than 12.5 degrees and is smaller than 17.5 degrees, and the ratio H/λ ranges from 0.0345 to 0.122.
5. The acoustic wave device according to claim 1 , wherein the cut angle is not smaller than 17.5 degrees and is smaller than 22.5 degrees, and the ratio H/λ ranges from 0.0346 to 0.118.
6. The acoustic wave device according to claim 1 , wherein the ratio H/λ ranges from 0.0344 to 0.123.
7. The acoustic wave device according to claim 6 , wherein the cut angle is not smaller than 2.5 degrees and is smaller than 7.5 degrees, and the ratio H/λ ranges from 0.038 to 0.123.
8. The acoustic wave device according to claim 6 , wherein the cut angle is not smaller than 7.5 degrees and is smaller than 12.5 degrees, and the ratio H/λ ranges from 0.0344 to 0.071.
9. The acoustic wave device according to claim 6 , wherein the cut angle is not smaller 12.5 degrees and is smaller than 17.5 degrees, and the ratio H/λ ranges from 0.0345 to 0.048.
10. The acoustic wave device according to claim 6 , wherein the cut angle is not smaller than 17.5 degrees and is smaller than 22.5 degrees, and the ratio H/λ ranges from 0.0346 to 0.037.
11. The acoustic wave device according to claim 1 , wherein the ratio H/λ ranges from 0.034 to 0.126 with a phase velocity of the leaky surface wave being less than a phase velocity of a slow transverse wave which propagates on the surface of the substrate.