IP Library Granted Patent US 7,982,365
Granted Patent B2
US 7,982,365 · App. 12/428,591 · Granted Jul 19, 2011

Elastic wave device and filter and electronic equipment using the device

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Quick Facts
Patent No.
US 7,982,365
App. No.
12/428,591
Granted
Jul 19, 2011
Kind
B2
Abstract

The elastic wave device of the present invention has an piezoelectric substrate; a first dielectric layer disposed on the piezoelectric substrate; a second dielectric layer disposed on the first dielectric layer; and an acoustical layer on the second dielectric layer. Determining each film thickness of the first and the second dielectric layers provides advantageous effects. That is, energy of an SH wave as a main wave is confined in the boundary between the piezoelectric substrate and the first dielectric layer, and at the same time, an SV wave is suppressed as an unwanted wave. The device allows the SV wave—whose displacement distribution is similar to that of Stoneley wave—to have displacement distribution on the upper surface of the second dielectric layer and to be suppressed by the acoustical layer disposed on the second dielectric layer.

Claims (12)

1. An elastic wave device comprising:

a piezoelectric substrate;

an IDT electrode disposed on an upper side of the piezoelectric substrate;

a first dielectric layer made of silicon oxide and disposed on an upper side of the IDT electrode;

a second dielectric layer made of silicon nitride or aluminum nitride and disposed on an upper side of the first dielectric layer; and

an acoustical layer disposed on an upper side of the second dielectric layer,

wherein the second dielectric layer has a film thickness in a range of 0.4λ to 0.7λ, where λ represents a wavelength at an operation center frequency of an elastic wave in the piezoelectric substrate, and

wherein the piezoelectric substrate is a Y-cut LiNbO 3 substrate with a cut angle ranging from −10 degrees to +30 degrees in which an elastic wave propagates in an X-axis direction or in a direction having a range of ±5 degrees with respect to the X axis.

2. The elastic wave device of claim 1 , wherein the first dielectric layer has a film thickness in a range of 0.1λ to 0.3λ.

3. The elastic wave device of claim 1 , wherein the IDT electrode is made of Cu.

4. A filter comprising the elastic wave device of claim 1 .

5. Electronic equipment comprising the elastic wave device of claim 1 .

Assignments (2)
CHANGE OF NAME Recorded Sep 19, 2016
From: SKYWORKS PANASONIC FILTER SOLUTIONS JAPAN CO., LTD.
To: SKYWORKS FILTER SOLUTIONS JAPAN CO., LTD.
Reel/Frame 040084/0571 →
ASSIGNMENT AND ACKNOWLEDGMENT Recorded May 14, 2015
From: PANASONIC CORPORATION
To: SKYWORKS PANASONIC FILTER SOLUTIONS JAPAN CO., LTD.
Reel/Frame 035664/0406 →