Semiconductor device and method for manufacturing the same
A semiconductor device includes a semiconductor substrate, a circuit region on the semiconductor substrate, a plurality of metal wires formed in the circuit region on the semiconductor device and a seal ring region surrounding the circuit region. A distance L between an outer periphery of the circuit region and an inner periphery of the seal ring region and a minimum interval W min in mutual intervals of the metal wires have a relationship of “1≦(L/W min )≦3”.
1. A semiconductor device comprising:
a semiconductor substrate;
a circuit region on the semiconductor substrate;
a plurality of metal wires formed in the circuit region on the semiconductor substrate; and
a seal ring region surrounding the circuit region, wherein a distance L between an outer periphery of the circuit region and an inner periphery of the seal ring region and a minimum interval W min in mutual intervals of the metal wires have a relationship of “1≦(L/W min )≦3”.
2. The semiconductor device according to claim 1 , wherein the distance L between the outer periphery of the circuit region and the inner periphery of the seal ring region and the minimum interval W min in the mutual intervals of the metal wires have a relationship of “1≦(L/W min )≦2.5”.
3. The semiconductor device according to claim 1 , wherein the distance L between the outer periphery of the circuit region and the inner periphery of the seal ring region and the minimum interval W min in the mutual intervals of the metal wires have a relationship of “1≦(L/W min )≦2”.
4. The semiconductor device according to claim 1 , wherein the distance L between the outer periphery of the circuit region and the inner periphery of the seal ring region and the minimum interval W min in the mutual intervals of the metal wires have a relationship of “1.1≦(L/W min )≦1.9”.
5. The semiconductor device according to claim 1 , wherein the metal wire is so formed as to include aluminum.
6. The semiconductor device according to claim 1 , further comprising:
a bonding pad.
7. A method for manufacturing a semiconductor device comprising:
preparing a semiconductor substrate;
forming a circuit region including a plurality of metal wires on the semiconductor substrate; and
forming a seal ring region surrounding the circuit region, wherein a distance L between an outer periphery of the circuit region and an inner periphery of the seal ring region and a minimum interval W min in mutual intervals of the metal wires have a relationship of “1≦(L/W min )≦3”.
8. The method for manufacturing a semiconductor device according to claim 7 , further comprising:
forming the metal wire by allowing the metal wire to include aluminum.