Semiconductor surface modification
Methods, systems, and devices associated with surface modifying a semiconductor material are taught. One such method includes providing a semiconductor material having a target region and providing a dopant fluid layer that is adjacent to the target region of the semiconductor material, where the dopant fluid layer includes at least one dopant. The target region of the semiconductor material is lased so as to incorporate the dopant or to surface modify the semiconductor material. During the surface modification, the dopant in the dopant fluid layer is actively replenished.
1. A method for doping a semiconductor material, comprising:
providing a semiconductor material having a target region;
providing a dopant fluid layer adjacent to the target region of the semiconductor material, wherein the dopant fluid layer includes at least one dopant;
actively replenishing the dopant fluid layer; and
lasing the target region of the semiconductor material through the dopant fluid layer to incorporate the dopant into the target region of the semiconductor material, wherein the lasing is performed in an enclosure that is devoid of a cover and with a laser pulse duration of between about 50 femtoseconds and about 50 picoseconds.
2. The method of claim 1 , wherein the semiconductor material is selected from the group consisting of group IV materials, group II-VI materials, group III-V materials, and combinations thereof.
3. The method of claim 1 , wherein the semiconductor material is silicon.
4. The method of claim 1 , wherein the dopant fluid layer is a member selected from the group consisting of sulfur containing fluids, fluorine containing fluids, boron containing fluids, phosphorous containing fluids, chlorine containing fluids, arsenic containing fluids, arsenic containing fluids, antimony containing fluids, and mixtures thereof.
5. The method of claim 1 , wherein the dopant fluid is a member selected from the group consisting of H 2 S, SF 6 , Se, Te, and combinations thereof.
6. The method of claim 1 , wherein the dopant fluid is a member selected from the group consisting of at least one of an electron donating element or a hole donating element.
7. The method of claim 1 , wherein actively replenishing maintains the concentration of the dopant in the dopant fluid layer in a predetermined range.
8. The method of claim 1 , further comprising regulating the active replenishment by measuring the dopant concentration or by measuring a contaminant in the dopant fluid layer.
9. The method of claim 1 , further comprising actively drawing a portion of the dopant fluid layer away from the target region of the semiconductor material.
10. The method of claim 9 , further comprising regulating the active drawing of the dopant fluid away from the target region by measuring the dopant concentration or by measuring a contaminant in the dopant fluid layer.
11. The method of claim 1 , wherein the lasing of the target region is performed at room pressure.
12. The method of claim 1 , wherein the method further includes providing a barrier fluid layer adjacent to the dopant fluid layer and opposite the semiconductor material, wherein the barrier fluid layer substantially confines the dopant fluid layer proximal to the semiconductor material.
13. The method of claim 12 , wherein the barrier fluid layer is comprised of a member selected from the group consisting of nitrogen, argon, neon, helium, and mixtures thereof.
14. The method of claim 1 , wherein lasing the target region of the semiconductor material comprises lasing with a laser pulse having a duration of from about 50 to 500 femtoseconds.
15. The method of claim 1 , wherein providing a dopant fluid layer further comprises providing the dopant in the dopant fluid layer in a concentration range of 5.0×10 −8 mol/cm 3 to 5.0×10 −4 mol/cm 3 .