Method for production of an ethylene/tetrafluorideethylene copolymer molded product
View Patent ↗Provided is a method for depositing a fluorine-doped silicon oxide film on the surface of a substrate made of a material comprising at least 50 mass % of an ethylene/tetrafluoroethylene copolymer. This method comprises flowing a mixed gas into between electrodes, exposing the mixed gas to electric power applied between the electrodes so that the electrical power density between the electrodes becomes from 0.5 to 1.1 W/cm 3 to cause discharge, and forming plasma of the mixed gas and depositing the fluorine-doped silicon oxide film on the surface of the substrate. In this method, the mixed gas for forming the fluorine-doped silicon oxide film comprises silicon tetrafluoride, oxygen and a hydrocarbon, the atomic ratio of oxygen atoms to carbon atoms (O/C) is from 1 to 10, and the atomic ratio of oxygen atoms to silicon atoms (O/Si) is from 1.7 to 25 in the mixed gas.
1. A method for depositing a fluorine-doped silicon oxide film on the surface of a substrate made of a material comprising at least 50 mass % of an ethylene/tetrafluoroethylene copolymer, the method comprising flowing a mixed gas into between electrodes, exposing the mixed gas to electric power applied between the electrodes so that the electrical power density between the electrodes becomes from 0.5 to 1.1 W/cm 3 to cause discharge, forming plasma of the mixed gas and depositing the fluorine-doped silicon oxide film on the surface of the substrate,
wherein the mixed gas for forming the fluorine-doped silicon oxide film comprises silicon tetrafluoride, oxygen and a hydrocarbon, and
wherein the atomic ratio of oxygen atoms to carbon atoms (O/C) is from 1 to 10, and the atomic ratio of oxygen atoms to silicon atoms (O/Si) is from 1.7 to 25 in the mixed gas.
2. The method according to claim 1 , wherein a temperature of the substrate at the time of forming the fluorine-doped silicon oxide film is at most 150° C.
3. The method according to claim 1 , wherein in the fluorine-doped silicon oxide film, the atomic ratio of oxygen atoms to silicon atoms (O/Si) is from 1.6 to 2.5, and the atomic ratio of fluorine atoms to silicon atoms (F/Si) is from 0.05 to 0.50.
4. The method according to claim 1 , wherein the contact angle of the fluorine-doped silicon oxide film to water is at most 20°.
5. The method according to claim 1 , wherein a thickness of the substrate is from 10 to 500 μM.
6. The method according to claim 1 , wherein a molar ratio of tetrafluoroethylene units to ethylene units in the ethylene/tetrafluoroethylene copolymer is from 30/70 to 70/30.
7. The method according to claim 1 , wherein the material further comprises from 0.01 to 10 mol. % of additional polymerizable units based on the total content of units.
8. The method according to claim 1 , wherein the atomic ratio of oxygen atoms to silicon atoms (O/Si) in the mixed gas is from 3 to 10.
9. The method according to claim 1 , wherein the atomic ratio of oxygen to silicon (O/Si) in the fluoride-doped silicon oxide film is from 1.9 to 2.1.
10. The method according to claim 1 , wherein the atomic ratio of fluorine atoms to silicon atoms (F/Si) is from 0.06 to 0.1.
11. The method according to claim 1 , wherein the contact angle of the fluorine-doped silicon oxide film to water is at most 15°.
12. The method according to claim 1 , wherein the refractive index of the fluorine-doped silicon oxide film at a wavelength of 550 nm is at most 1.42.
13. The method according to claim 1 , wherein a thickness of the fluorine-doped silicon oxide film is from 40 to 120 nm.
14. The method according to claim 1 , wherein the electrical power density between the electrodes becomes from 0.8 to 1.0 W/cm 3 .