Thin film transistor and method for fabricating same
A method for forming a thin film transistor on a substrate is disclosed. A gate electrode and a gate insulation layer are disposed on a surface of the substrate. A deposition process is performed by utilizing hydrogen diluted silane to form a silicon-contained thin film on the gate insulation layer first. A hydrogen plasma etching process is thereafter performed. The deposition process and the etching process are repeated for at least one time to form an interface layer. Finally, an amorphous silicon layer, n+ doped Si layers, a source electrode, and a drain electrode are formed on the interface layer.
1. A thin film transistor structure, comprising:
a substrate;
a gate electrode disposed on the substrate;
a gate insulation layer disposed over the gate electrode;
an interface layer, disposed on part of the gate insulation layer, having a plurality of stacked microcrystalline silicon layers;
an amorphous silicon layer disposed on the interface layer; and
a source electrode and a drain electrode disposed on the amorphous silicon layer.
2. The thin film transistor structure of claim 1 , wherein the substrate includes a glass substrate, a quartz substrate, or a plastic substrate.
3. The thin film transistor structure of claim 1 , wherein the interface layer comprises of at least ten layers of the microcrystalline silicon layer.
4. The thin film transistor structure of claim 1 , wherein the thickness of the microcrystalline silicon layer is less than about 50 angstroms (Å).
5. The thin film transistor structure of claim 1 , wherein the microcrystalline silicon layer is formed from hydrogen diluted silane.
6. The thin film transistor structure of claim 1 , further comprising a protective layer and a plurality of contact holes located within the protective layer for connecting the source electrode and the drain electrode to a capacitor or an image signal line.
7. A thin film transistor structure, comprising:
a substrate;
a gate electrode disposed on the substrate;
a gate insulation layer disposed over the gate electrode;
an interface layer, disposed on part of the gate insulation layer, having a microcrystalline silicon layer;
an amorphous silicon layer disposed on the interface layer; and
a source electrode and a drain electrode disposed on the amorphous silicon layer.
8. The thin film transistor structure of claim 7 , wherein the substrate includes a glass substrate, a quartz substrate, or a plastic substrate.
9. The thin film transistor structure of claim 7 , wherein the interface layer comprises depositing at least ten layers of the silicon-contained thin films to form the microcrystalline silicon layer.
10. The thin film transistor structure of claim 7 , wherein the thickness of the microcrystalline silicon layer is less than about 50 angstroms (Å).
11. The thin film transistor structure of claim 7 , wherein the microcrystalline silicon layer is formed from hydrogen diluted silane.
12. The thin film transistor structure of claim 7 , further comprising a protective layer and a plurality of contact holes located within the protective layer for connecting the source electrode and the drain electrode to a capacitor or an image signal line.