Polariton mode optical switch

1. A device comprising:

a substrate;

a first and a second optical-field confining structures located on the substrate, the first optical-field confining structure comprising a surface to receive photons, the second optical-field confining structure spaced apart from the first optical-field confining structure; and

a quantum structure disposed between the first and second optical-field confining structures,

wherein the first and the second optical-field confining structures are configured to substantially confine therebetween an optical field of the photons.

2. The device of claim 1 , wherein the quantum structure is configured to selectively operate in a mott insulator mode and a superfluid mode depending on a wavelength of the received photons.

3. The device of claim 1 , wherein at least one of the first and the second optical-field confining structures is in contact with the quantum structure.

4. The device of claim 1 , wherein at least one of the first and the second optical-field confining structures is spaced apart from the quantum structure.

5. The device of claim 1 , wherein the first and the second optical-field confining structures are spaced apart by a distance equal to or less than a wavelength of the photons.

6. The device of claim 4 , wherein the first and the second optical-field confining structures are of a thickness equal to or less than one quarter of the wavelength of the photons.

7. The device of claim 1 , wherein the first and the second optical-field confining structures are elongated metal structures.

8. The device of claim 7 , wherein the elongated metal structures are rectangular metal structures.

9. The device of claim 7 , wherein the elongated metal structures are wedge-shaped metal structures.

10. The device of claim 7 , wherein the elongated metal structures are made of at least one material selected from the group consisting essentially of Ag, Al, Au, Ni, and Ti.

11. The device of claim 1 , wherein the first and the second optical-field confining structures are photonic crystals.

12. The device of claim 1 , wherein the quantum structure is made of one or more materials selected from the group consisting essentially of Group II-VI semiconductor compounds and Group III-V semiconductor compounds.

13. The device of claim 1 , wherein the quantum structure is made of Cd x Zn 1-x S, where the value of x is between 0.5 and 1.0.

14. The device of claim 1 , wherein the quantum structure is made of CdSe x S 1-x , where the value of x is between 0 and 1.

15. The device of claim 1 , further comprising a buffer layer disposed between the substrate and the first and the second optical-field confining structures.

16. An optical switching device, the device comprising:

a substrate; and

an optical switching unit located on the substrate, the optical switching unit including:

a plurality of quantum structures;

a plurality of optical-confining structures located on first and second sides of each of the plurality of optical-field confining structures;

a photon input surface; and

a photon output surface,

wherein the plurality of quantum structures, the plurality of optical confining structures, the photon input surface and the photon output surface are cooperatively configured such that optical fields produced in each of the quantum structures are effective to enable photons received at the photon input surface to hop through the quantum structures and be transmitted through the optical switching unit to the photon output surface.

17. The device of claim 16 , wherein one of the optical-confining structures includes the photon input surface and another of the optical-confining structures includes the photon output surface.

18. The device of claim 17 , wherein the optical switching unit selectively operates in a superfluid mode or a mott insulator mode depending on a wavelength of photons received in the optical switching unit.

19. The device of claim 17 , wherein the optical confining structures are spaced apart by a predetermined distance.

20. The device of claim 19 , wherein the predetermined distance is substantially the same for each two adjacent optical-confining structures or is different for at least some of the adjacent optical-confining structures.

21. The device of claim 17 , wherein the optical-confining structures include metal.

22. The device of claim 21 , wherein a permittivity of the metal is configured for a specific spectrum of wavelength to be transmitted through the optical switching unit.

23. The device of claim 21 , wherein the optical switching unit transmits a data light signal when a combined energy of the data light signal and a control signal is substantially equal to a transition energy of the quantum structures.

24. An optical switching device, the device comprising:

a substrate;

a plurality of optical-confining structures formed on the substrate and configured to operate as surface plasmon waveguides, the plurality of optical-confining structures including a photon input surface and a photon output surface;

a plurality of quantum structures separating the optical-confining structures, wherein the plurality of optical-confining structures and the plurality of quantum structures are configured to transmit photons having wavelengths in a specific spectrum.

25. The device of claim 24 , the wavelengths in the specific spectrum are transmitted when a combined energy of a data signal and a control signal is substantially equal to a transition energy f the quantum structures.

26. The device of claim 24 , wherein the plurality of optical-confining structures are metal.

27. The device of claim 26 , wherein the optical-confining structures have a permittivity selected for the specific spectrum.