IP Library Granted Patent US 8,231,795
Granted Patent B2
US 8,231,795 · App. 12/434,092 · Granted Jul 31, 2012

Micromachined horn

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Quick Facts
Patent No.
US 8,231,795
App. No.
12/434,092
Granted
Jul 31, 2012
Kind
B2
Abstract

An acoustic device includes a transducer formed on a first surface of a substrate and an acoustic horn formed in the substrate by a dry-etching process through an opposing second surface of the substrate. The acoustic horn is positioned to amplify sound waves from the transducer and defines a non-linear cross-sectional profile.

Claims (32)

1. A method of fabricating an integrated acoustic device, the method comprising:

forming a transducer on a front side of a substrate; and

dry-etching an acoustic horn through a back side of the substrate, a throat of the acoustic horn positioned adjacent to the acoustic transducer, wherein dry-etching the acoustic horn comprises varying a flow ratio of compounds used for etching the substrate to vary a cross-sectional shape of a sidewall of the acoustic horn.

2. A method of fabricating an integrated acoustic device, the method comprising:

forming a transducer on a front side of a substrate; and

dry-etching an acoustic horn through a back side of the substrate, a throat of the acoustic horn positioned adjacent to the acoustic transducer, wherein dry-etching the acoustic horn comprises varying at least one of a time of exposure, a pressure and a concentration of an etching compound used for etching the substrate to vary a cross-sectional shape of a sidewall of the acoustic horn.

3. The method of claim 1 , wherein the dry-etching comprises a deep reactive ion etching (DRIE) etching process.

4. The method of claim 1 , further comprising:

forming a pool of etch resistant material in the front side of the substrate to act as an etch stop for dry-etching the acoustic horn, the transducer being formed on the pool.

5. The method of claim 1 , further comprising:

forming a buried oxide layer on the front side of the substrate as an etch stop for dry-etching the acoustic horn, the transducer being formed on the buried oxide layer.

6. The method of claim 1 , wherein the transducer serves as an etch stop for dry-etching the acoustic horn.

7. The method of claim 1 , wherein dry-etching the acoustic horn further comprises:

dry-etching a first portion of the substrate using a first flow ratio of an etch compound and a polymer depositing compound; and

dry-etching a second portion of the substrate using a second flow ratio of the etch compound and the polymer depositing compound, the second flow ratio causing the sidewalls to be etched more vertically.

8. The method of claim 1 , wherein the cross-sectional shape of the sidewall is substantially exponential.

9. The method of claim 1 , wherein the cross-sectional shape of the sidewall comprises a stepped profile.

10. The method of claim 1 , wherein a shape of a mouth of the acoustic horn comprises one of a circle or an oval.

11. The method of claim 1 , further comprising:

applying a thin film coating on the sidewalls of the acoustic horn.

12. The method of claim 11 , wherein the thin film coating comprises diamond.

13. The method acoustic device of claim 11 , wherein the thin film coating comprises one of silicon nitride and silicon carbide.

14. The method of claim 2 , wherein the cross-sectional shape of the sidewall is substantially exponential.

15. The method of claim 2 , wherein the cross-sectional shape of the sidewall comprises a stepped profile.

16. The method of claim 2 , wherein a shape of a mouth of the acoustic horn comprises one of a circle or an oval.

17. The method of claim 2 , further comprising:

applying a thin film coating on the sidewalls of the acoustic horn.

18. The method of claim 17 , wherein the thin film coating comprises diamond.

19. The method acoustic device of claim 17 , wherein the thin film coating comprises one of silicon nitride and silicon carbide.

20. A method of fabricating an acoustic device, the method comprising:

forming a transducer on a front side of a substrate; and

dry-etching an acoustic horn through a back side of the substrate while varying at least one etch parameter such that the acoustic horn has an asymmetrical cross-sectional profile, a throat of the acoustic horn positioned adjacent to the acoustic transducer.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE OF MERGER TO 09/05/2018 PREVIOUSLY RECORDED AT REEL: 047230 FRAME: 0133. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Oct 29, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047630/0456 →
MERGER Recorded Oct 4, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047230/0133 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032851-0001) Recorded Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 037689/0001 →
PATENT SECURITY AGREEMENT Recorded May 8, 2014
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032851/0001 →
MERGER Recorded May 7, 2013
From: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 030369/0703 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 1, 2009
From: MARTIN, DAVID; PHILLIBER, JOEL; CHOY, JOHN
To: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
Reel/Frame 022633/0873 →