Semiconductor device member, production method of semiconductor-device-member formation liquid and semiconductor device member, and semiconductor-device-member formation liquid, phosphor composition, semiconductor light-emitting device, lighting system and image display system using the same

1. A semiconductor device member having a siloxane skeletal structure serving as a basic skeleton, a silicon content of 25 weight % or more, and a ratio of (total area of peaks of the chemical shift of −40 ppm or more and 0 ppm or less)/(total area of peaks of the chemical shift of less than −40 ppm) in a solid Si-nuclear magnetic resonance spectrum of 3 or more and 200 or less,

wherein the semiconductor device member has a weight loss at the time of heating of 50 weight % or lower, and a ratio of peeling of 30% or lower, wherein the weight loss is measured by

obtaining a 10-mg fragment of said semiconductor device member, heating said fragment from 35° C. to 500° C. at a temperature rising rate of 10° C./min under 200-ml/min flow of air, and measuring the weightloss with a thermogravimetric/differential thermal analyzer, and wherein the ratio of pealing is measured by

dropping a semiconductor-device-member formation liquid into a silver-plated copper cup having a diameter of 9 mm and a depth at the recess of 1 mm curing the formation liquid to obtain the semiconductor device member,

letting the obtained semiconductor device member absorb moisture in an atmosphere of 85-° C. temperature and 85-% humidity for 20 hours,

heating the semiconductor device member that absorbed moisture from room temperature to 260° C. in 50 seconds, and then keeping the semiconductor device member at 260° C. for 10 seconds,

cooling said heated semiconductor device member to room temperature, and observing the existence or the nonexistence of a peeling of said semiconductor device member from the above-mentioned copper cup both by visual inspection and with a microscope, and

determining the ratio of peeling of said semiconductor device member by repeating the above operations on 10 different samples of said semiconductor device member.

2. A semiconductor device member having a siloxane skeletal structure serving as a basic skeleton, a silicon content of 25 weight % or more, and a ratio of (total area of peaks of the chemical shift of less than −40 ppm or more and 0 ppm or less)/(total area of peaks of the chemical shift of less than −40 ppm) in a solid Si-nuclear magnetic resonance spectrum of 3 or more and 200 or less, the semiconductor device member having a weight loss at the time of heating of 50 weight % or lower, and a measurement value of hardness (Shore A) by durometer type A of 5 or larger and 90 or smaller; wherein the weight-loss is measured by

obtaining a 10-mg fragment of said semiconductor device member, heating said fragment from 35° C. to 500° C. at a temperature rising rate of 10° C./min under 200-ml/min flow of air, and measuring the weightloss with a thermogravimetric/differential thermal analyzer.

3. A semiconductor device member according to claim 1 or claim 2 , wherein the semiconductor device member comprises an inorganic particle.

4. A semiconductor device member according to claim 1 or claim 2 , wherein the semiconductor device member comprises a phosphor.

5. A production method of the semiconductor device member of claim 1 , comprising drying a polycondensate obtained by a process comprising performing hydrolysis and polycondensation of a compound represented by the following formula (1) and/or an oligomer thereof, wherein

the hydrolysis and polycondensation are performed in the presence of an organometallic compound catalyst comprising at least one element selected from the group consisting of zirconium, hafnium, tin, zinc and titanium, wherein formula (1) is represented by

M m+ X n Y 1 m−n   (1)

wherein

M represents at least one element selected from the group consisting of silicon, aluminum, zirconium and titanium,

X represents a hydrolyzable group,

Y 1 represents a univalent organic group,

m represents an integer of 1 or larger representing the valence of M, and

n represents an integer of 1 or larger representing the number of X groups, where m≧n.

6. A production method of the semiconductor device member of claim 1 , comprising drying a polycondensate obtained by a process comprising performing hydrolysis and polycondensation of a compound represented by the following formula (2) and/or an oligomer thereof, wherein

the hydrolysis and polycondensation are performed in the presence of an organometallic compound catalyst comprising at least one element selected from the group consisting of zirconium, hafnium, tin, zinc and titanium.

(M s+ X t Y 1 s−t−1 ) u Y 2   (2)

wherein

M represents at least one element selected from silicon, aluminum, zirconium and titanium,

X represents a hydrolyzable group,

Y 1 represents a univalent organic group,

Y 2 represents a u-valent organic group,

s represents an integer of 2 or larger representing the valence of M,

t represents an integer of 1 or larger and s−1 or smaller, and

u represents an integer of 2 or larger.

7. A semiconductor light-emitting device comprising an (A) package, (B) semiconductor element and (C) sealant, wherein the (C) sealant is the semiconductor device member according to claim 1 , and

the surface materials of said (A) package and/or said (B) semiconductor element contain one or more of Si, Al and Ag, and

said (C) sealant is in direct contact with the surface materials of said (A) package and/or said (B) semiconductor element and satisfies all of the following conditions (i) to (iii):

(i) said sealant has a functional group capable of forming a hydrogen bond with an oxygen in a metalloxane bond or a hydroxyl group, which is present on the surface of a ceramic or a metal,

(ii) the maintenance rate of transmittance with respect to light of 400-nm wavelength before and after being kept at temperature of 200° C. for 500 hours is 80% or more and 110% or less, and

(iii) the maintenance rate of transmittance with respect to the light of 400-nm wavelength before and after being irradiated with light having wavelength of 370 nm or longer and center wavelength of 380 nm and radiant intensity of 0.6 kW/m 2 for 72 hours is 80% or more and 110% or less.

8. A semiconductor light-emitting device according to claim 7 , further satisfying the following condition (iv):

(iv) the ratio of brightness after 500 hours illumination, in which a square semiconductor element measuring 900 μm per side having 460±10 nm of luminous wavelength is illuminated at 85-° C. temperature and 85-% relative humidity for 500 hours in a continuous manner with 350 mA of driving current while maintaining the temperature of the emission surface at 100±10° C., relative to that of just after switched on is 90% or higher.

9. A semiconductor light-emitting device according to claim 7 or claim 8 , wherein the surface materials of the (A) package and/or the (B) semiconductor element contain one or more of SiN x , SiC and SiO 2 .

10. A semiconductor light-emitting device according to claim 7 or claim 8 , wherein the surface materials of the (A) package and/or the (B) semiconductor element contain one or more of Al, AlN and Al 2 O 3 .

11. A semiconductor light-emitting device according to claim 7 or claim 8 , wherein the (B) semiconductor element contains the surface material in its substrate part.

12. A semiconductor light-emitting device according to claim 7 or claim 8 , wherein the area of the emission surface of the (B) semiconductor element is 0.15 mm 2 or larger.

13. A semiconductor light-emitting device according to claim 7 or claim 8 , wherein the surface temperature of the emission surface of the (B) semiconductor element during operation is 80° C. or higher and 200° C. or lower.

14. A semiconductor light-emitting device according to claim 7 or claim 8 , wherein the amount of electric power during operation is 0.1 W or larger.

15. A lighting system formed using a semiconductor light-emitting device according to claim 7 or claim 8 .

16. An image display formed using a semiconductor light-emitting device according to claim 7 or claim 8 .