Semiconductor light emitting device, and backlight and display device comprising the semiconductor light emitting device
The present invention provides a semiconductor light emitting device comprising a light intensity difference reducing layer provided between an ultraviolet semiconductor light emitting element and a wavelength converting material layer, and a backlight and a display device comprising the semiconductor light emitting device. The semiconductor light emitting device is an LED light emitting device which has improved uniformity of emitted light and reduced non-uniformity of brightness and chromaticity of emitted light. The light emitting device according to the present invention is particularly suitable for use in various display devices, preferably, for example, in display devices in equipment where a reduction in size, a reduction in weight, a reduction in thickness, electric power saving, high brightness, and excellent color rendering properties are particularly required, for example, cellular phones, personal digital assistants, electronic dictionaries, digital cameras, computers, liquid crystal televisions (TVs), and peripheral devices of these devices.
1. A semiconductor white light emitting device comprising:
an ultraviolet semiconductor light emitting element;
a wiring connected to the ultraviolet semiconductor light emitting element;
a wavelength converting material layer; and
a light intensity difference reducing layer provided between the ultraviolet semiconductor light emitting element and the wavelength converting material layer, wherein
the wavelength converting material layer contains a wavelength converting material comprising a mixture of three types of phosphors which, upon absorption of ultraviolet light emitted from the ultraviolet semiconductor light emitting element, emit red light, blue light, and green light, respectively,
the light intensity difference reducing layer is formed of a silicone resin,
the ultraviolet semiconductor light emitting element and the wiring are completely covered by the light intensity difference reducing layer, and
the blue light emitting phosphor is represented by formula (I):
(Sr 1-x-y Ba x Ca y Eu z ) 10 (PO 4 ) 6 .Cl 2 (I)
wherein x, y, and z are x<0.2, y<0.1, and 0.005<z<0.1, respectively.
2. The semiconductor light emitting device according to claim 1 , wherein the light intensity difference reducing layer is formed of a transparent resin material.
3. The semiconductor light emitting device according to claim 1 , wherein the wavelength converting material layer is formed of a dispersion, in a transparent resin material, of the wavelength converting material comprising at least one of three types of phosphors which, upon absorption of ultraviolet light emitted from the ultraviolet semiconductor light emitting element, emit red light, blue light, and green light, respectively.
4. The semiconductor light emitting device according to claim 1 , wherein a plurality of the ultraviolet semiconductor light emitting elements are provided on a substrate, a continuous layer of the light intensity difference reducing layer is provided to cover any two or more of the plurality of the ultraviolet semiconductor light emitting elements, and a continuous layer of the wavelength converting material layer is provided to cover the continuous layer of the light intensity difference reducing layer.
5. The semiconductor light emitting device according to claim 1 , wherein a plurality of the ultraviolet semiconductor light emitting elements are provided on a substrate, a discontinuous layer of the light intensity difference reducing layer is provided to cover any one or at least two of the plurality of the ultraviolet semiconductor light emitting elements, and a continuous layer of the wavelength converting material layer is provided to cover the discontinuous layer of the light intensity difference reducing layer.
6. A backlight comprising a semiconductor light emitting device according to claim 1 .
7. A display device comprising a backlight according to claim 6 .