LED semiconductor body and use of an LED semiconductor body
View Patent ↗An LED semiconductor body includes at least one first radiation-generating active layer and at least one second radiation-generating active layer, wherein the LED semiconductor body has a photonic crystal.
1. An LED (light emitting diode) semiconductor body comprising:
a first radiation-generating active layer;
a second radiation-generating active layer; and
a photonic crystal,
wherein the first active layer and the second active layer generate radiation having the same wavelength.
2. The LED semiconductor body as claimed in claim 1 , wherein the photonic crystal has a plurality of first regions having a first refractive index and a plurality of second regions having a second refractive index.
3. The LED semiconductor body as claimed in claim 2 , wherein the first and second regions are arranged regularly.
4. The LED semiconductor body as claimed in claim 2 , wherein the first and second regions form a 1-dimensional, 2-dimensional or 3-dimensional lattice.
5. The LED semiconductor body as claimed in claim 2 , wherein the second regions are connected to one another.
6. The LED semiconductor body as claimed in claim 2 , wherein the first regions are surrounded by the second regions.
7. The LED semiconductor body as claimed in claim 2 , wherein the first regions are filled or unfilled depressions in a semiconductor layer of the LED semiconductor body.
8. The LED semiconductor body as claimed in claim 7 , wherein the first regions have a width and/or depth of between 100 nm and 500 nm.
9. The LED semiconductor body as claimed in claim 1 , wherein the first active layer and the second active layer are arranged one above the other in a vertical direction.
10. The LED semiconductor body as claimed in claim 1 , wherein the first active layer and the second active layer are monolithically integrated in the semiconductor body.
11. The LED semiconductor body as claimed in claim 1 , further comprising a carrier element, wherein the LED semiconductor body element is arranged on the carrier element.
12. The LED semiconductor body as claimed in claim 11 , wherein the carrier element is electrically conductive.
13. The LED semiconductor body as claimed in claim 11 , wherein the carrier element is different from a growth substrate for the LED semiconductor body.
14. The LED semiconductor body as claimed in claim 13 , wherein the growth substrate has been removed from the semiconductor body.
15. The LED semiconductor body as claimed in claim 11 , further comprising a reflection layer arranged between the LED semiconductor body element and the carrier element, the reflection layer for reflecting radiation generated in the LED semiconductor body element in a direction of the photonic crystal.
16. The LED semiconductor body as claimed in claim 15 , wherein the reflection layer comprises at least one of the materials Au, Al, Zn and/or Ag.
17. The LED semiconductor body as claimed in claim 15 , wherein the reflection layer comprises a transparent conductive oxide (TCO).
18. The LED semiconductor body as claimed in claim 15 , wherein the reflection layer is electrically conductive.
19. The LED semiconductor body as claimed in claim 15 , wherein the reflection layer comprises a silicon nitride or silicon oxide.
20. The LED semiconductor body as claimed in claim 15 , wherein the photonic crystal is arranged between the reflection layer and the LED semiconductor body element.
21. The LED semiconductor body as claimed in claim 11 , wherein the photonic crystal is arranged on a side of the LED semiconductor body element that is remote from the carrier element.
22. The LED semiconductor body as claimed in claim 1 , further comprising a tunnel junction between the first active layer and the second active layer.
23. The LED semiconductor body as claimed in claim 22 , wherein the tunnel junction comprises a highly doped layer of a first conductivity type and a highly doped layer of a second conductivity type.
24. The LED semiconductor body as claimed in claim 1 , wherein the first active layer and/or the second active layer comprises Al n Ga m In 1-n-m P, where 0≦n≦1, 0≦m≦1 and n+m≦1.
25. The LED semiconductor body as claimed in claim 1 , wherein the first active layer and/or the second active layer comprises Al n Ga m In 1-n-m As, where 0≦n≦1, 0≦m≦1 and n+m≦1.
26. The LED semiconductor body as claimed in claim 1 , wherein the first active layer and/or the second active layer comprises Al n Ga m In 1-n-m N, where 0≦n≦1, 0≦m≦1 and n+m≦1.
27. The LED semiconductor body as claimed in claim 1 , wherein the semiconductor body emits radiation in a vertical direction.
28. The LED semiconductor body as claimed in claim 27 , wherein the emission angle is α≦30°.
29. The LED semiconductor body as claimed in claim 1 , wherein the LED semiconductor body is a thin-film semiconductor body.
30. An LED (light emitting diode) semiconductor body comprising:
a first radiation-generating active layer configured to generate radiation at a first wavelength;
a second radiation-generating active layer overlying the first radiation-generating active layer in a vertical direction that is perpendicular to a main extension direction of the first and second active layers, the second radiation-generating active layer configured to generate radiation at the same first wavelength; and
a photonic crystal overlying the first and second radiation-generating active layers.
31. The LED semiconductor body as claimed in claim 30 , further comprising a third radiation-generating active layer, wherein the photonic crystal overlies the third radiation generating active layer.