Surface acoustic wave filter, antenna duplexer and method for manufacturing them
View Patent ↗A surface acoustic wave filter comprised of a plurality of surface acoustic wave resonators having different resonance frequencies, the filter comprising a substrate made of lithium niobate, comb electrodes ( 1201 and 1202 ) formed on the substrate, and a thin dielectric film covering the comb electrodes ( 1201 and 1202 ), wherein the surface acoustic wave resonator having a lower resonance frequency is formed to have a metallization ratio larger than a metallization ratio of the surface acoustic wave resonator having a higher resonance frequency, thereby providing the surface acoustic wave filter and an antenna duplexer featuring superior characteristics with insignificant ripples while suppressing spurious responses of the surface acoustic wave resonators.
1. A surface acoustic wave filter comprised of a plurality of surface acoustic wave resonators having different resonance frequencies, the filter comprising:
a substrate made of lithium niobate;
comb electrodes formed on an upper surface of the substrate; and
a thin dielectric film covering the comb electrodes;
wherein a metallization ratio of the surface acoustic wave resonator having a lower resonance frequency is larger than a metallization ratio of the surface acoustic wave resonator having a higher resonance frequency; and
wherein the plurality of surface acoustic wave resonators comprises at least two surface acoustic wave resonators in a series arm, and a metallization ratio of one of the surface acoustic wave resonators in the series arm having a lower resonance frequency is larger than a metallization ratio of the other surface acoustic wave resonator having a higher resonance frequency.
2. The surface acoustic wave filter of claim 1 , wherein the plurality of surface acoustic wave resonators further comprises at least two surface acoustic wave resonators in parallel arms, and a metallization ratio of one of the surface acoustic wave resonators in the parallel arms having a lower resonance frequency is larger than a metallization ratio of the other surface acoustic wave resonator having a higher resonance frequency.
3. The surface acoustic wave filter of claim 1 , wherein the substrate comprises a rotated Y-cut substrate having a cut angle set to a range of −10 to +30 degrees.
4. The surface acoustic wave filter of claim 1 , wherein the thin dielectric film comprises a SiO 2 film.
5. The surface acoustic wave filter of claim 1 , wherein the thin dielectric film is configured with raised portions.
6. The surface acoustic wave filter of claim 1 , wherein the substrate is a single piece common to the plurality of surface acoustic wave resonators.
7. An antenna duplexer having a receiving filter and a sending filter, each of the receiving filter and the sending filter being comprised of a surface acoustic wave filter provided with a plurality of surface acoustic wave resonators having different resonance frequencies, wherein each of the resonators comprises a substrate made of lithium niobate, a comb electrode formed on an upper surface of the substrate and a thin dielectric film covering the comb electrode, and further wherein a metallization ratio of the surface acoustic wave resonator having a lower resonance frequency is larger than a metallization ratio of the surface acoustic wave resonator having a higher resonance frequency,
wherein a pass band of the receiving filter is set higher than a pass band of the sending filter, and a metallization ratio of at least one of the surface acoustic wave resonators constituting the sending filter is larger than a metallization ratio of at least one of the surface acoustic wave resonators constituting the receiving filter.